BCW 90 Search Results

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

BCW75

Abstract: C382V BCW79 BCW76 ptoc 6
Contextual Info: BCW BCW - BCW BCW P N P -S iliz iu m -T r a n s is to r e n 75 76 79 80 BCW 75, BCW 76, BCW 79 und BCW 80 sind epitaktische PNP-Silizium -Planar-Transistoren. Der Kollektor ist m it dem Gehäuse elektrisch verbunden. Die Transistoren eignen sich als

BCV71

Abstract: BCV72 BCX70G FMMT3903 FMMT3904 FMMT3905 FMMT3906 BCW61D 215
Contextual Info: SOT-23 TRANSISTORS NPN GENERAL PURPOSE RATINGS A N D CHARACTERISTICS at 25°C ambient temperature. Type BCV71 BCV72 FM MT3903 FMMT3904 BCW 71/71R BCW 72/72R BCX70G BCX70H BCX70J BGX70K BCW 60A BCW60B BCW60C BCW 60D BCW 31/31R BCW 32/32R BCW 33/33R FM M T-A 20

ic 556

Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

BCW91

Abstract: bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C
Contextual Info: BCW 90A, B,C BCW 91 A, B NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P ITAXIAL • LF Amplification A m plifica tio n BF v CEO MOV BCW 90 160 V BCW 91 0,8 V ■c h21E 150 mA-2 V Maximum power dissipation Plastic case

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

Contextual Info: BCW71/72/81 SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BCW 71 K1 BCW 72 K2 BCW 81 K3 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arkin g BCW 60A = AA BCW 60B '= AB BCW 60C = AC BCW 60D = AD P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.o_ 2.8 0.48 0.38 0.14 3 2.6

BCW60

Abstract: BCX70
Contextual Info: BCW60 BCX70 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 60A AA BCW 60B AB BCW 60C AC BCX70G AG BCX70H AH BCX70J AJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND

transistor c331

Abstract: scw 61 ST CD C331 BCX70 C331 c331 transistor ZES1 za sot23 ST CD C333 st c332
Contextual Info: BCW 60 BCX 70 IMPN-Transistoren für NF-Vorstufen und Schalteranwendung BCW 60 und BCX 70 sind epitaktische NPN-Silizium-Planar-Transistoren mit Plastikum­ hüllung 23 A 3 DIN 41 869 SO T-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 60 und

2BCW

Contextual Info: BCW 71, BCW 72 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max

BCS46B

Abstract: Scans-00107017 BCS47B BC846A BC846B BC850B BC850C BCV71 BCV72 FMMT2484
Contextual Info: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS NPN h FE Type BC846A BC846B BCV71 BCV72 FMMT2484 FMMT3903 FMMT3904 FMMT5209 FMMT5210 BC850B BC850C BC847A BC847B BC847C BCW71 BCW72 BCX70G BCX70H BCX70J BCX70K BCW 60A BCW60B BCW 60C BCW60D FMMT4123

ST Microelectronics Transistors

Abstract: transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70
Contextual Info: BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 69 H1 BCW 70 H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

Transistors marking 69

Contextual Info: BCW 69, BCW 70 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse

BCW31

Abstract: BCW32 BCW33
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g P A C K A G E O U T L IN E D E T A IL S BCW 31 = Dl A L L D IM E N S IO N S IN m m BCW 32 = D2 BCW 33 = D3 3.0 2.8 0 .14 0.48 1 0.38 1 » 3 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: BCW31/32 SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BCW 31 D1 BCW 32 D2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

marking C1

Abstract: BCW 90
Contextual Info: BCW29 BCW30 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 29 C1 BCW 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

BCX70

Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking

6CW SOT23

Abstract: 6CW 36 marking 6cw sot-23 6CW 60 6CW 75 marking 6cw 6CW 71 MARKING 6cw SOT23 6Cw marking code sot 23 6CW pNP
Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking

marking AGs sot-23

Abstract: BCW60FF BCX71
Contextual Info: BCW 60, BCX 70 NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX71 PNP 2 1 Type Marking

C1567

Abstract: Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 PNP Type Marking Ordering Code

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

transistor BD 540

Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches

Contextual Info: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PA C K A G E O U T L IN E D ETAILS BCW 69 = H I A L L D IM ENSIONS IN m m BCW 70 = H2 _3.0_ 2.8 0.1 4 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.°2_