BC859 Search Results

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage

Contextual Info: BC856 thru BC859 Small Signal Transistors PNP TO-236AB (SOT-23) Mounting Pad Layout .122 (3.1) .110 (2.8) .016 (0.4) 0.037 (0.9 0.037 (0.95) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 0.035 (0.9) Dimensions in inches and (millimeters) .007 (0.175)

Contextual Info: BC856 thru BC859 Small Signal Transistors PNP TO-236AB (SOT-23) Mounting Pad Layout 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) 0.037 (0.95) Dimensions in inches and (millimeters)

Contextual Info: BC856 THRU BC859 Small Signal Transistors PNP FEATURES SOT-23 .118 ( 3 . 0 ) .016 ( 0 .4 ) ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits.

MARKING 4a

Abstract: BC859 .a h marking marking 4a sot23
Contextual Info: SEMICONDUCTOR BC859 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 4A 1 2 Item Marking Description Device Mark 4 BC859 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER Collector Base Voltage BC856 BC857 BC858, BC859 Collector Emitter Voltage

str 6707

Abstract: datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors

Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 _ • Complement to BC846 . BC8S0 SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C

SMD TRANSISTOR MARKING 4c

Abstract: 4F smd transistor NF marking TRANSISTOR SMD 4f BC859 smd smd marking rs smd transistor 4b MARKING SMD 4G smd 4B BC859 BC859C
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC859,BC860 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage max. 45 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 PAR TM AR KIN G D ETAILS:BC 856A - 3A B C 858C - B C 856B - 3B BC 859A - 4A 3L B C 857A - 3E BC 859B - 4B B C 85 7 B - 3F B C 859C - 4C B C 85 7 C - 3G B C 8 6 0 A - 4E

1bs sot323

Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

bc857

Abstract: tsb200 BC558 Transistors
Contextual Info: BC856 to BC859 VISHAY Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups

MARKING CODE 21E SOT323

Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BC846W

Abstract: BC849W BC856AW BC856W BC857AW BC857W BC858W BC859W
Contextual Info: BC856W . BC859W BC856W . BC859W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2011-07-11 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]

BC558 SOT-23

Abstract: BC558 BC849 BC856 BC856A BC857 BC857A BC858A BC859 BC859A
Contextual Info: BC856 thru BC859 Small Signal Transistors PNP TO-236AB (SOT-23) Mounting Pad Layout 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) 0.037 (0.95) Dimensions in inches and (millimeters)

BC8488

Abstract: H12E BC848 equivalent 1bs sot323
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

marking CODE 1BS

Abstract: BC846 Infineon BC846-BC850 NA MARKING SOT23 NPN BC846B SOT23 BC846B E6327 BC857 st MV SOT23 BC857 BC858
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

BC860C

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Low noise input stages of audio frequency equipment.

4gp transistor

Abstract: BC859 BC860 PHILIPS marking Code 5C marking 4Gp BC860C
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860 PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • Low noise input stages of audio frequency equipment.