BC238 H PARAMETER Search Results

BC238 NPN transistor download datasheet

Abstract: lowest noise audio NPN transistor bc237 bc337 bc239 BC239 NPN transistor download datasheet BC238 TRANSISTOR W2 bc238 data sheet BC238 datasheet transistor bc237 datasheet
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio

transistor bc238

Abstract: BC239 NPN transistor BC238 datasheet transistor bc237 bc337 BC237 BC238 BC239 BC238 NPN transistor download datasheet BC239 NPN transistor download datasheet 15KHZ
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio

BC237

Abstract: BC238B BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC239 BC237B/2388/2398
Contextual Info: BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current — Continuous

BC238B

Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25

BC238B

Abstract: BC239 BC237A BC238 BC237 bc237v
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25

BC239C

Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0

BC239

Abstract: BC237 BC238 TYP120 BC238 datasheet TYP150 TYP270 silicon planar epitaxial transistors BC239B CDIL BC237
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC237,238, A,B,C BC239, B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE Amplifier Transistors

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC237,238, A,B,C BC239, B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE Amplifier Transistors

BC238 h parameter

Abstract: 5v 3w audio amplifier 5.5w
Contextual Info: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for

bc238 equivalent

Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage

N67 ferrite

Abstract: siemens r10 core tl431 and pc817 EF25 transformer capacitor siemens 4700 35 tl431 feedback voltage pc817 NCP power transformer AND8127 optocoupler IC PC817 NCP1207
Contextual Info: AND8127/D Implementing NCP1207 in QR 24 W AC−DC Converter with Synchronous Rectifier Prepared by: Petr Lidak ON Semiconductor http://onsemi.com APPLICATION NOTE • Over−Load Protection: by continuously monitoring the Introduction The NCP1207 is a controller dedicated for driving the

BC238 h parameter

Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Contextual Info: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC167

Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC519

Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

Contextual Info: MH88510/11 MITEL Subscriber Line Interface Circuit SLIC Preliminary Information ISSUE 1 Features April 199 5 O rdering Inform ation High G ain version MH88511 C om patible with popular MH88500 M H88510 MH88511 O perates with a wide range of battery voltages

MPSA90

Abstract: IN5246B pabx ring generator IN4732 2-wire intercom hk relay relay 5v 5 pin MH88500 MH88510 MH88511
Contextual Info: M H 8 8 5 1 0 /1 1 MITEL Subscriber Line Interface Circuit SLIC P relim inary Inform ation ISSUE 1 Features April 1995 O rdering Inform ation High Gain version M H 88511 C om patible w ith popula r M H88500 O perates w ith a w ide range of battery voltages

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.