BB53C131 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE t^ E D • bb53c131 D03bb70 174 BYV96D A IAPX BYV96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan

2N2222A 331

Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
Contextual Info: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.

in4151

Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Contextual Info: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

BYV43-40A

Abstract: BYV43-30 byv dual rectifier m2784 BYV43 BYV4313ERIES BYV4335 BYV43-40
Contextual Info: KI AMER PHILIPS/DISCRETE ObE » • ^ 5 3 1 3 1 GD11311 E ■ BYV43~SERIES T-03-19 ' SCHOTTKY—BARRIER DOUBLE RECTIFIER DIODES High-efficfency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero

Contextual Info: N AflER PHILIPS/DISCRETE DEVELOPMENT DATA1 • ObE D bb53T31 00135T4 1 ■ BGY94A BGY94B BGY94C T h l* dftta *h « *t c o n ttm t advance Infonnatloo and Jpecifrcatlon* are jubject to change w ithout notlea, _ _ 86D 01056 D -r.fH + b Q - a /

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

Contextual Info: BDT64; 64A BDT64B; 64C _ / V SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. NPN complements are BDT65,

BUV89

Contextual Info: N AMER PHILIPS/DISCRETE b^E » bbSB'lBl DDBflMTO TBS BUV89 IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a plastic SOT93 envelope especially intended fo r use in AC m otor control systems from three-phase mains.

X72A

Abstract: x72a SOT23-6
Contextual Info: Product specification P h ilip s Sem iconductors CNX71A/CNX72A H igh-voltage optocouplers FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and D C

Contextual Info: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0027207 47T M A P X b^E D BT137F SERIES J V FULL-PACK TRIACS Glass-passivated 8 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

Contextual Info: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Philips Semiconductors bb53T31 0032347 386 W A P X Hybrid VHF push-pull amplifier module _ _ _ — FEATURES • • • • • Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability.

Diode BYW 56

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­