BAE SYSTEMS Search Results

tms320tci6488 evm

Abstract: CW247 Chip28 TCI6488 CW241 Rake search accelerator Antenna log periodical TCI antenna tms320tci6488 C64X
Contextual Info: Application Report SPRAB58—July 2009 TCI648x Antenna Interface Programming Communication Infrastructure Brighton Feng, Jane Lu, Albert Bae Abstract The TMS320TCI648x antenna interface AIF is a peripheral module that supports transfers of baseband antenna IQ data between uplink and downlink baseband DSP

rad750 user manual bae

Abstract: bae rad750 RAD750 RAD750 processor 234A524 RAD750 3U single board computer IEC-1076-4-101 RAD750 software reference manual wedgelock mil-b-5087
Contextual Info: RAD750• Board Hardware Specification Document Number 234A524 Release Date August 1, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document Number: 234A524 RAD750 CompactPCI Hardware Specification Notices Before using this information and the product it supports, be sure to read the general information on the

DMC20481NY-LY-BAE-BKN

Abstract: DMC20481 DMC-20481NY-LY-BAE-BKN DMC20481NY-LY LED ly series KS0063B NTD-7141 DMC20481NY-LY-bae
Contextual Info: First Edition Sep 6, 2005 LCD Module Technical Specification Final Revision * Type No. DMC20481NY-LY-BAE-BKN Approved by Quality Assurance Division ) Checked by (ACI Engineering Division) ) T.Yuchi Prepared by (ACI Engineering Division) Table of Contents

bae rad750

Abstract: RAD750 rad750 user manual bae RAD750 processor A22 CGA board ae09 cga 624 hs01 SECDED mcc w04
Contextual Info: HS-01 12/2000 Version: 1.1 Technical Data 1 Power PCI PowerPC/PCI/Memory Controller Hardware Specifications The Power PCI chip developed by BAE SYSTEMS provides a radiation hardened PowerPC microprocessor common hardware reference platform CHRP compliant bridge between the PowerPC

SEN-4995

Contextual Info: SENSITRON_ SEMICONDUCTOR SEN-4995 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-4995, REV. ENG. A HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052

RRS01

Abstract: vibrating sensor alarm SiRRS01 RRS01-01 RRS01-05 BAE Systems RRS0 VIBRATION SENSOR mtbf SHOCK SENSOR JAPAN
Contextual Info: SiRRS01 Angular Rate Sensor The SiRRS01 angular rate sensor has evolved from the highly successful Vibrating Structure Gyroscope developed by BAE SYSTEMS, which has been in service since 1990. This MEMS implementation of our VSG technology, offers continued advancement in miniaturisation and reliability.

nas620

Abstract: RAD750 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark
Contextual Info: RAD750 Board Hardware User's Manual Document Number 234A533 Release Date December 20, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document #: 234A533 RAD750 3U CompactPCI Hardware Users Manual Notices Before using this information and the product it supports, be sure to read the general information on the

RAD750

Abstract: RAD6000 bae rad750 RAD750TM sabritec BAE Systems MIL-STD-1553B serial 422 1553 SUmmit mtbf dual transceiver RAD750 board software
Contextual Info: RAD6000 Single Board Space Computer in CompactPCI Form Factor BAE SYSTEMS announces a RAD6000 based 6U CompactPCI standard single board computer, available in two configurations. The CompactPCI board employs the RAD6000, the 25 MIPS radiation hardened version of the RS/6000, the predecessor to

SEN-5050

Contextual Info: SENSITRON SEMICONDUCTOR SEN-5050 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-5050, REV. ENG. B HERMETIC POWER MOSFET N-CHANNEL - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052 DESCRIPTION: A 100 VOLT, 0.035 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Single Emitter Diode Lasers 200 m, 808 nm, 8 W JDL-BAE-200-808-TM-8-4.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers

TB 2929 H

Abstract: i486sx 82424TX LT3112 i486sx intel idt 256kb cache intel 486 dx 33mhz P6135
Contextual Info: INTEGRATED DE VI CE baE • 4 3 5 5 77 1 D O m S b n 128KB/256KB/512KB SECONDARY CACHE MODULES FOR THE INTEL* i486 CPU/82420TX PCI SET Sib ■ PRELIMINARY IDT7MP6133 Id™ ! « ¡SESSIS IDT7MP6153 FEATURES DESCRIPTION • 128KB/256KB/512KB secondary cache m odule family

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS 'HFG/NVDQ2HMFKD$LHSSDQ#HNCD+@RDQR …L ML 6 JDL-BAE-090-940-TE-12-4.0 Features: Applications: m High laser power m /TLOHMFNERNKHC RS@SDK@RDQR@MCÆADQK@RDQR

251A172

Abstract: 250A783 4927N 251A172-417 F1192M-95 1RU44 512KX32 251A137 270 uf 375v T1A 250v
Contextual Info: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20188 A D A T E Refer to Document Change History Herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.

251A137

Abstract: 512KX40 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137
Contextual Info: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20156 G D A T E Refer to Document Change History herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.

BAE Systems

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

197A807

Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

transistor B885

Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

203A665

Abstract: J122 SMD TRANSISTOR 314 j122
Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

L7582AAE

Abstract: L8581 L7581AAE L7541 L7581AC 24-Pin Plastic DIP L7581 L7582 L7583 SOG PACKAGE
Contextual Info: Product Brief June 2000 L7581/2/3 and L8581 Ringing, Tip/Ring, and Line Card Access Switches Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Low impulse noise ■ Make-before-break, break-before-make operation ■ Clean, bounce-free switching

S4 46

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

A1760

Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

prom 238A790

Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

prom 238A790

Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free