BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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k8a5615et54mhz22ech22fch+1422edh22fdhk8a56156et70ns---ba379ba377ba339ba438ba429ba416ba-302ba512ba308ba324
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BA142
Contextual Info: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8q2815uqb128mb56tsopsimilar90000h-097fffh+7088000h-08ffffh080000h-087fffh078000h-07ffffh070000h-077fffh068000h-06ffffh060000h-067fffhba142
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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k8s5615et22f8h22feh54mhz+1666mhz270sec240sec256byte00003fh00007fhba512ba469ba516ba508ba323ba340ba476ba507ba312ba379
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BA339
Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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k8a5615et54mhz22ech22fch+1322edh22fdhk8a56156et70ns---ba339ba516ba501ba379ba481ba473ba450ba508ba204
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BA339
Abstract: K8C1215ET BA507
Contextual Info: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8c12512mb0110000h-011ffffh0100000h-010ffffh+900f0000h-00fffffh00e0000h-00effffh00d0000h-00dffffh00c0000h-00cffffh00b0000h-00bffffh00a0000h-00affffhba339k8c1215etba507
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BA339
Contextual Info: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8c12512mb0110000h-011ffffh0100000h-010ffffh+700f0000h-00fffffh00e0000h-00effffh00d0000h-00dffffh00c0000h-00cffffh00b0000h-00bffffh00a0000h-00affffhba339
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ba508
Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Contextual Info: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary
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k5l5628jt115-ball80x13ba508+9ba311ba340ba516ba512ba516 diodeba339ba379ba295ba473
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Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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k8a5615et54mhz22ech22fch+422edh22fdhk8a56156et70ns---
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BA379
Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
Contextual Info: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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k8s1215etck8s1215ebck8s1215ezc512mb+1664fbga0150000h-015ffffh0140000h-014ffffh0130000h-013ffffh0120000h-012ffffh0110000h-011ffffhba379ba506ba438ba508ba306ba473ba431ba356ba471ba258
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BA339
Abstract: ba406 K8F1315ETM
Contextual Info: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8f12512mbinh-00fffffh00e0000h-00effffh+900d0000h-00dffffh00c0000h-00cffffh00b0000h-00bffffh00a0000h-00affffh0090000h-009ffffh0080000h-008ffffhba339ba406k8f1315etm
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ba508
Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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k8a5615et54mhz22ech22fch+1422edh22fdhk8a56156et70ns---ba508ba516 diodeba512ba507ba358ba339ba505ba459ba516ba329
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BA339
Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
Contextual Info: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8f12512mbcouldresul0000h-00effffh00d0000h-00dffffh+900c0000h-00cffffh00b0000h-00bffffh00a0000h-00affffh0090000h-009ffffh0080000h-008ffffh0070000h-007ffffhba339amd+athlon+64+x2+pin+diagramkuhnke+z396.64
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transistor A1624
Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
Contextual Info: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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k5n1229acd-bq12512mb128mbtransistor a1624+8ba21 transistorsamsung k5 128mb flashba252ba339512mb nor flash memorytba 1205k5n12samsung, k5n
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BA339
Abstract: ba379 BA489
Contextual Info: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P2915UQB
Abstract: BA1104 BA20B ba232b 555H BA1-43-BA1-46 samsung nor flash Samsung MCP ba2112 ba1111
Contextual Info: K8P2915UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8p2915uqb128mbba1-13030000h-037fffh+15ba1-12028000h-02ffffhba1-11020000h-027fffhba1-10018000h-01ffffhba1104ba20bba232b555hba1-43-ba1-46samsung nor flashsamsung mcpba2112ba1111
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212-62
Abstract: C8100 DIL48 SAA5244A SAA5247 SAA5249 SAA5254 SAA5281 m2b 160 le 4
Contextual Info: Philips Semiconductors Preliminary specification Integrated VIP and Teletext with Background Memory Controller IVT1.1 BMCX SAA5249 FEATURES • Complete teletext decoder featuring a background memory controller in a single 48-pin DIL package. Capable of storing of up to 512 teletext pages in an
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saa524948-pinsaa5247qfp64+9ot319-17110fl2b212-62c8100dil48saa5244asaa5254saa5281m2b 160 le 4
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N458
Abstract: 8e89 C887 6ba9 G4EG 74G4 HC74G 0WQ1 A68g
Contextual Info: `echlmjmgr fmn hpkal beilg ald elqinmlkelo MK?J F;GM;E IJHAJ;FF;<E? FHLCHG =HGLJHEE?J 4d51;PCK BCAB KI?> KL;G>1;EHG? K?JC?K 6d748\RY =RPQ FWNNM @VZRVU 9VUZXVSSNX 2C@946=F5C@947=F3 -C_ W^ [\_W[ZRX2. 9 IF=1BK FRWZ VUR_`]U^ : g48G@EJH 8B>EG@I?CH 9N I?< :EC9@D8I@ED E= pq :ECC8D;H
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BA339
Abstract: BA407 BA404 BA420
Contextual Info: Advance Information FLASH MEMORY K8F12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8f12512mb00d0000h-00dffffh00c0000h-00cffffh+1000b0000h-00bffffh00a0000h-00affffh0090000h-009ffffh0080000h-008ffffh0070000h-007ffffh0060000h-006ffffhba339ba407ba404ba420
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BA425
Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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BA306
Abstract: BA339
Contextual Info: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8c12512mb0110000h-011ffffh0100000h-010ffffh+800f0000h-00fffffh00e0000h-00effffh00d0000h-00dffffh00c0000h-00cffffh00b0000h-00bffffh00a0000h-00affffhba306ba339
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K8Q2815UQB
Abstract: BA142 K8P6415 k8q2815 K8P6415UQB BA169-BA172 sample code read and write flash memory K8Q2815UQ BA189-BA192 K8P2715UQB BA141
Contextual Info: K8Q2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8q2815uqb128mb56tsop56-pin+1050typba142k8p6415k8q2815k8p6415uqbba169-ba172sample code read and write flash memory k8q2815uqba189-ba192k8p2715uqbba141
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BA512
Abstract: BA389 PIN Diode BA333 ba508 BA379 BA306 BA507 BA341 BA459 BA343
Contextual Info: K8C10 11 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification K8C10(11)INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8c10512mbfah-007ffffh0060000h-006ffffh+150050000h-005ffffh0040000h-004ffffh0030000h-003ffffh0020000h-002ffffh0010000h-001ffffhba512ba389 pin diodeba333ba508ba379ba306ba507ba341ba459ba343
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BA471
Abstract: K8F12 BA459 BA313 BA318 BA343 BA379 BA402 BA514 BA280
Contextual Info: Advanced Information K8F12 13 15ET(B)M Flash Memory 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8f12512mb00000h0000000h-00001ffh+1164-ball08maxba471ba459ba313ba318ba343ba379ba402ba514ba280
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