BA100 Search Results

BA100 diode

Abstract: ba100 diode BA100
Contextual Info: BA100 SILICON DIO DE G eneral purpose silicon diode in a subm iniature all g la ss DO-7 envelope. MECHANICAL DATA I Dimensions in mm not tinned CNI DO-7 o «• t k Cl • V ► t 25.4min u U , [I 25.4min 7 6 t o * y - 7ZQ065O J mln. m ounting width 13 The coloured band indicates the cathode side

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

40101-001

Abstract: NK4 RESISTOR RC21U 40101 BY cecc 40101-002 resistor color code nt4s vishay ny5 E192 RESISTOR NY4 100K
Contextual Info: NK, NP, NT, NY Vishay Sfernice Precision Metal Film Resistors FEATURES • • • • • 0.063 W to 0.5 W at 70 °C Approved according to CECC 40101 Wide ohmic range from 1 Ω to 4.7 MΩ Good initial precision up to ± 0.1 % Operating temperatures: - 55 °C to + 155 °C for TCR ≥ 25 ppm/°C

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

0704M

Abstract: E192 Series 1107M
Contextual Info: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound • Wide range of ohmic values (0.04 Ω to 1 MΩ) • Low temperature coefficient (± 25 ppm/°C available)

MSP2B

Abstract: 0704M
Contextual Info: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound  Wide range of ohmic values (0.04  to 1 M)  Low temperature coefficient (± 25 ppm/°C available)

AM1000

Abstract: RS71Y RC21U rs58y nk5 vishay
Contextual Info: NK, NP, NT, NY Vishay Sfernice Precision Metal Film Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • • • • • • NFC 83-230/CECC 40 100 ESA-SCC 4001 LN2/GAM-T-1 Wide ohmic range from 1 Ω to 5.7 MΩ Good initial precision up to ± 0.1 % Operating temperatures:

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

ba100

Contextual Info: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 Low temperature coefficient ≤ ± 50 ppm/°C Low ohmic values 15 mΩ available Excellent behavior against humidity

SC150C-60

Abstract: SC100C-120 SC100C-60 SC100C-80 SC50C-60 SC50C-80 SC70C-100 SC70C-120 SC70C-40 SC70C-60
Contextual Info: 13 - « Vgt V 1. 95 1. 95 1. 50 1. 50 1. 50 1. 50 1. 50 i . 60 1. 60 1. 60 1. 60 1. 60 1. 60 1. 60 1.60 1. 60 1. 60 1. 40 1.40 1. 45 1. 45 1. 45 1. 45 X. ‘i j 1. 40 1. 40 Tj c o 25 25 25 25 2b 25 2b 2b 2b 2b 25 2b 2b 2b 25 25 25 25 25 25 25 25 2b 0C 2b

BA102

Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
Contextual Info: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

samsung ba92

Abstract: BA137 k8p3215
Contextual Info: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

diode ba102

Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Contextual Info: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BA100 diode

Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Contextual Info: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance

06SEC

Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

K8P6415UQB

Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
Contextual Info: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BB121

Contextual Info: C31E6.pdf 01.5.29 This is the PDF file of catalog No.C31E-6 BLM18 Series 1608 Size 0.4±0.2 0.8±0.15 1 1.6±0.2 0.8±0.15 in mm Impedance (at 100MHz) (ohm) Rated Current (mA) DC Resistance(max.) (ohm) Operating Temperature Range (°C) BLM18AG121SN1 120 ±25%