BA 857 Search Results

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

BFR 965

Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Contextual Info: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

BA679

Contextual Info: VISHAY BA679_Spice Vishay Semiconductors BA679 Spice Parameters * Technology: DISCRETE DIODE * Device: PIN Diode BA 679 * Type: Typical nom * Model established: 03-95, by B. Beckmann, TM1iC63-HN + IS = 718p RS = 1.37 N = 1.889 IBV= 100p + CJO=1.19p VJ = 240m M = 175m FC = 500m

PEX8532

Abstract: PEX8532-BB25BI tip 134 ba7h A15H ISA CODE VHDL a38h 749H plx vhdl code 6446
Contextual Info: PEX 8532AA/BA/BB ExpressLane Versatile PCI Express Switch Data Book Version 1.4 August 2006 Website www.plxtech.com Technical Support www.plxtech.com/support Phone 408 774-9060 800 759-3735 FAX 408 774-2169 Copyright 2006 by PLX Technology, Inc. All Rights Reserved – Version 1.4

PEX8532-BC25BIG

Abstract: PEX8532 965H 06FFFFFFH 449H PEX8532-BC25BI PEX8532-BB25BI plx pex PEX8111
Contextual Info: ExpressLane PEX 8532AA/BA/BB/BC 8-Port/32-Lane Versatile PCI Express Switch Data Book Version 1.6 February 2007 Website www.plxtech.com Technical Support www.plxtech.com/support/ Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2007 by PLX Technology, Inc. All Rights Reserved – Version 1.6

wg 713

Contextual Info: F L C 103 WG C-Ba nd Power GciAs I E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain*Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

BC 245 C

Abstract: BC 245 6130-5X4 tda 5410 TDA6170X Q62702-F1250
Contextual Info: List of Types in Alphanumerical Order SIEMENS Type Ordering Code Page Type Ordering Code Page BA 595 Q62702-A952 160 BC 849 CW Q62702-C2311 189 BAR 64 Q62702-A1041 173 BC 850 B Q62702-C1885 181 BAR 64-04 Q62702-A1010 173 BC 850 BW Q62702-C2312 189 BAR 64-05

Contextual Info: HF;?F KILIAQROE HIGH NMTEO OEJAV F\Xijg\h 1 Olt ebfdeqA 8<5> jj 1 8=D ptfq`efkd `^m^_fifqv 1 <hY afbib`qof` pqobkdqe /_bqtbbk `lfi ^ka `lkq^`qp0 1 Fobbm^db afpq^k`bA 87jj 1 Pbbqfkd YGH 7>773 7=:8 obfkclo`b fkpri^qflk 1 Solar`q fk ^``loa^k`b ql LHF =7:<48 ^s^fi^_ib

953A

Contextual Info: TOSHIBA TMP47C453AN, TMP47C453AF CMOS 4-Bit Microcontroller TMP47C453AN, TMP47C453AF T h e 4 7 C 4 5 3 A is a high pe rform ance 4 -b it single c h ip m ic ro Part No. ROM RAM TMP47C453AN 4096 x 8-bit c o m p u te r ba sed on th e T L C S -4 7 C M O S series. A nd the

A3544

Contextual Info: 6 8 12324567589ABCBDE6F5856A354A3BAC636 :0/C6"B46 8 6 FB82%5A36:54BA6+&*6 68B3CA6345536CDB66 !"6#A356$ADB%6 , 6 /

A9 npn

Contextual Info: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynamic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 7123451677789A9BCDE9F7C8 7 77777777 7 77777777 7 7 97FB 39A17F7 5CD !"#$77%&' 7&871BB7 !799A98 123456 '6*3%+5*'%6,

AD458

Abstract: 82C435
Contextual Info: 31ACABDA25AED 7!""D- 6F1. 123456789 12345627 4ABCDEF3ACABDABABAE BAE5AED 35 54D!59 54 4BC"#$%&"B'BC" D! &DADBC"#$%F ACABDA*

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

rexroth

Abstract: BOSCH REXROTH 0822124006 Bosch M20x1 0822 23006 25006 25008 integrated circuit BOSCH pressure air bosch
Contextual Info: Bosch Rexroth AG | Pneumatics  Piston rod cylinders ¬ series PRA Ø 32 - 100 mm, double-acting, magnetic piston, adjustable cushioning, piston rod: with external thread Standards Working pressure min/max Ambient temperature min. / max. Medium compressed air acc. to ISO 8573-1:2001

TQC-228A-8R

Abstract: 7406 TTL CMOS TQC228A TC8569AF tc8565 TQC-228
Contextual Info: JSHIBA LIC/UP h4E D • T D 'i 7 2 l4li QDSbTTD 2^1 * T 0 S 3 FLOPPY DISK CONTROLLER 11 TC8569AF Floppy Disk Controller 1. GENERAL DESCRIPTION TC8569AF is a single chip LSI for Floppy Disk Controller, which has VFO and other circuits with FDC chip for interfacing a processor to floppy disk

0410

Abstract: LT 1910 FSLT-S180G
Contextual Info: 2012 Size 1.71-1.91GHz Band Chip Multilayer RF Transformer Impedance Ratio 50:200 FSLT-S180G All the technical data and information contained herein are subject to change without notice. LT-FSLT-S180G-0410A Shape & Size 1.0 6 0.65 3 0.65 5 0.3 2 0.3 4 2.0

Contextual Info: mH Y II II VI A I HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 2,097,152

1A11BS

Contextual Info: mV Y II II 11A I li II li fl • HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4brts, and fabricated w ith the Hyundai CM O S process. This dual bank circuit consists of two m emories, each 2,097,152