A18A1 Search Results
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Glenair Inc M85049/4A18A1- Bulk (Alt: M85049/4A18A1) |
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Glenair Inc M85049/5A18A1- Bulk (Alt: M85049/5A18A1) |
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Glenair Inc M85049/3A18A1- Bulk (Alt: M85049/3A18A1) |
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Molex 8R3A00A18A1201Mic 3P F/Fr 12In 22/1 Pvc Ss; |Molex 8R3A00A18A1201 |
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Molex 8R3A00A18A120Mic 3P F/Fr 12In. 1/4Npt #22 P; |Molex 8R3A00A18A120 |
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A18A1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040 |
OCR Scan |
smjs820btms29f04029lf040/29vf040+2 | |
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Contextual Info: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from |
OCR Scan |
am29dl800b8-bit/51216-bitam29dl800+1 | |
20510DContextual Info: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications |
OCR Scan |
am29lv00420510d | |
am29f040bContextual Info: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology |
OCR Scan |
am29f040bam29f040 | |
29f800bb
Abstract: 29F800BT 29F800B 29F800BT-70 29F800BT-90 29F800BB-70 M29F800B 29f800bb55
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OCR Scan |
am29f800b8-bit/51216-bitam29f800+10 | |
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Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom) |
OCR Scan |
as29lv8001mx8/512kx168/512k64kbyte+6 | |
LH28F800BJHE-PBTLT9Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PBTLT9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF80JT9) Lead-free (Pb-free) Spec. Issue Date: October 8, 2004 Spec No: EL16X081 LHF80JT9 ●Handle this document carefully for it contains material protected by international copyright law. |
Original |
lh28f800bjhe-pbtlt9lhf80jt9el16x081 | |
29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
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Original |
mx29f800t/b1mx8/512kx1670/90/120ns7us/12us+13 | |
71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
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s71ws512nx0/s71ws256nx032m/16m128/64megabit16-bit+11 | |
LH28F800BJHB-PTTL10
Abstract: FC004 ap007 7D002
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Original |
x8/x16lh28f800bjhb-pttl10lhf80j24ap-001-sd-e+5 | |
ADSL Modem circuit diagram
Abstract: ADSL MODEM PROGRAMMING 100-pin dimm KMM330S104CT S5N8946
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Original |
s5n8946adsl modem circuit diagramadsl modem programming100-pin dimm+1 | |
MX29LV401T
Abstract: SA10
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Original |
mx29lv401t/b55r/70/90ns9us/11us16k-byte+6 | |
BY8190
Abstract: ML22Q58 ML22Q54 ML2250 ml2254-xxxhb ML2256-XXXHB ML22Q58GA ML2252 MSM6650 MSM9800
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Original |
fcdl2250full-08ml2251/52/53/54/56-xxxml22q54/q58ml2250+11 | |
M69KB128AA
Abstract: BCR10
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m69kb128aa104mhzbcr10 | |
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Contextual Info: BROOKTREE CORP b3E B • 1^455^5 DDQ7G3T Interface Specification IS-210.15 SMDS C o n tro l and R e a sse m b ly F o r m a tte r Part # UGA-210 M arch, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 6 1 9 -4 5 2 -7 5 8 0 |
OCR Scan |
is-210uga-2100007qm0 | |
AMIC A49LF040TL
Abstract: A49LF040TL A49LF004 A49LF040 lad1-24
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Original |
a49lf0404mbit039amic a49lf040tla49lf040tl+2 | |
BCR10
Abstract: M69KM096AA
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Original |
m69km096aa83mhz32-wordbcr10 | |
ST 7 flus 56
Abstract: 2Mbit EPROM 80196 MEMORY INTERFACE SC80C451 PSD301 7 flus 56 YM-1032
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OCR Scan |
st 7 flus 562mbit eprom80196 memory interfacesc80c451+3 | |
74L8138
Abstract: SC80C451 read/74L8138
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OCR Scan |
87c5180c31g8hc1174ls373+9 | |
xc400se
Abstract: xilinx pq-160 xilinx xc4006e 4028X cc16ce transistor r14 ah16 XC4025EX XC401OE pcb4 b34 952
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OCR Scan |
xc4000xc4000-seriesxc4000exc4000ex+14 | |
2Mbit EPROM
Abstract: 80C196K
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OCR Scan |
2mbit eprom80c196k | |
cj cl a17Contextual Info: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector |
OCR Scan |
tms29lf004ttms29lf004bsmjs85016k-byte+3 | |
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Contextual Info: MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns |
Original |
mx29lv004t/b55r/70/90ns16k-byte32k-byte+6 | |
AM29F040BContextual Info: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology |
OCR Scan |
am29f040bam29f040twhwi-12- | |