B4 SOT Search Results

diode B4

Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
Contextual Info: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B

Contextual Info: BSV52 SOT23 IMPIM SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage v CBO o m O < V CES CO LU o >

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors EMB4 General purpose transistors dual digital transistors SOT-563 FEATURES z Two DTA114T chips in a package 1 Marking: B4 (3) Equivalent circuit (2) (1) R1 R1 (4)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMB4N dual digital transistors PNP+PNP SOT-363 FEATURES Two DTA144T chips in a package. 1 1 Marking: B4 (3) (2) (1) R1 Equivalent circuit R1 (4) (5) (6) Absolute maximum ratings (Ta=25℃)

SL 100 NPN Transistor base emitter collector

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile

Contextual Info: HEF4085B DUAL 2-WIDE 2-INPUT AND-OR-INVERT BATE T h e H E F 4 0 8 5 B is a dual 2-w id e 2 -in p u t A N D -O R -in v e rt gate, each w ith an ad ditional in p u t (A 4 or B4 w h ich can be used as e ith e r an expander in p u t o r an in h ib it in put. A H IG H o r A 4 o r B4 forces the

HEF4085BD

Abstract: HEF4085B HEF4085BP HEF4085BT HEF4085
Contextual Info: HEF4085B gates DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATE T h e H E F 4 0 8 5 B is a dual 2 -w id e 2 -in p u t A N D -O R -in v e rt gate, each w ith an additional in p u t A 4 o r B4 w hich can be used as e ith e r an expander in p u t o r an in h ib it in p u t. A H IG H on A 4 o r B4 forces the

Contextual Info: PJ SR7 0 T B4 Very Low Capacitance Diode Array This diode array is configured to protect up to two high speed data transmission lines, used in Low Voltage Differential Signal LVDS ports. Acting as a line terminator, minimizes overshoot and undershoot conditions

Contextual Info: Philips Semiconductors Product specification b b s a ^ a i 00317 b4 1T3 • APX, NPN high frequency high voltage m BFQ265; BFQ265A transistor * N AMER PHILIPS/DISCRETE blE D " FEATURES PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance

Teledyne F-13

Abstract: NRF 211 teledyne U series
Contextual Info: TELEDYNE COMPONENTS 2ÖE D H öT17tiDS Q O Ü b4 G3 3 JÊÊ S D 1 1 0 0 , S D Ì 101 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION SDtlOOCHP — SD1100DD SD1100HD 450V, 35 ohm Sorted Chips In Conductive Waffle Pack

sot669 package

Abstract: POWERSO-8 MO-235
Contextual Info: Package outline Plastic single-ended surface-mounted package LFPAK; Power-SO8 ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions)

Contextual Info: Package outline Plastic single-ended surface-mounted package LFPAK56; Power-SO8 ; 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b X c A 1/2 e A (A3) A1 C q L detail X y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions)

Contextual Info: FFB2907A / FMB2907A / MMPQ2907A FMB2907A FFB2907A E2 C2 B2 E1 C1 SC70-6 Mark: .2F MMPQ2907A C1 pin #1 E1 B1 E1 C2 pin #1 B1 E2 B2 E3 E4 B4 B2 SuperSOTä-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can

CBVK741B019

Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

Contextual Info: PDF: 2000 Sep 28 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 16 terminations e1 L1 4x L (12×) e1 b (12×) 1 2 Z6 (12×) L3 (4×) Z4 (12×) Z (2×) 3 Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 5 e2 e b2 (2×) SOT559A Z1 (2×)

BT 812

Abstract: 6265a TRANSISTOR S 813 BFQ265 BFQ265A
Contextual Info: Philips Semiconductors bt.sa'iai □□3i?b4 iT3 NPN high frequency high voltage transistor IAPX m * Product specification BFQ265; BFQ265A N AMER P H I L I P S / D I S C R E T E FEATURES b lE D “ PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance

MMPQ2907

Abstract: SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

FFB3904

Abstract: 1N916 CBVK741B019 F63TNR FMB3904 MMPQ3904 SC70-6 SOIC-16
Contextual Info: E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

SM-8 Package

Abstract: e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792
Contextual Info: H-Bridge devices in SM-8 Package 4 3 6 B2 2 B4 B1 E2,E3 1 C3,C4 7 E1,E4 8 C1,C2 5 The SM-8, is an 8 lead version of the industry standard SOT223 package. The package and leads occupy an area of 6.7 x 7.3mm and with a maximum height of 1.7mm it is ideal for space critical applications.

SOT669

Abstract: MO-235 sot669 package
Contextual Info: Package outline Philips Semiconductors Plastic single-ended surface mounted package LFPAK ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 2.5 5 mm scale DIMENSIONS (mm are the original dimensions)

BSV52

Abstract: BSV52R HIGH SPEED SWITCHING NPN SOT23 DS201
Contextual Info: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 P AR TM AR KIN G DETAILS: B SV52 - B2 B SV 52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER VALUE UNIT V CBO 20 V V CES 20 V 12 V SYM BO L C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e

sot559

Contextual Info: PDF: 1999 Jun 10 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 16 terminations e1 L1 4x L (12×) e1 b (12×) 1 2 L3 (4×) Z9 3 Z (2×) Z6 (6×) 4 L2 16 b4 (4×) (4×) 15 5 e2 e b2 (2×) SOT559A Z1 (2×) 6 14 Z7 (6×)

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

F63TNR

Abstract: FFB2907A FMB2907A MMPQ2907A SC70-6 SOIC-16 TE ssot-6
Contextual Info: E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2F B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SuperSOT-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the