B3B75S4 Search Results

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

BC 939 Transistor Data

Abstract: MJ4647 MJ4646
Contextual Info: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli­

BSV16

Abstract: BSV17-10 LTNV 2N4405 BSV15-16 BAY63 BSV15 BSV15-10 BSV17 BSv15 MOTOROLA
Contextual Info: MO TO RO LA SC XSTR S/R F 1EE D I b3b75S4 QOfibMi? T r- 3 3-¿>r I BSV15-10, 46 thru MAXIMUM RATINGS Sym bol Coltector-Emitter Voltage VCEO Collector-Emitter Voltage VCES BSV 15 40 40 Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

MFQ6660C

Abstract: MFQ6660P
Contextual Info: MOTOROLA SC XSTRS/R F 1ZE 0 I b3b75S4 QUAD DUAL-IN-LINE N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS FIELD EFFECT TRANSISTORS □Qfit. 75c? 3 I T Æ -2 5 MFQ6660C; P These TMOS Power FETs are designed fo r high current, high speed power switching applications such as switching power supplies, CMOS logic,

MM3725

Abstract: IU70
Contextual Info: MOTOR O L A SC XSTRS/R F 1SE 0 I b3b75S4 OOÖSbflO 7 | Order this data sheet b y M M 3725/D MOTOROLA SEMICONDUCTOR T - 3 3 -0 5 * TECHNICAL DATA M M 3725 M M 3 725 A N P N S ilic o n S w it c h in g T ra n sisto rs . . . designed for medium-current, high-speed saturated sw itching and core driver

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

2n2501

Abstract: 2N2501 MOTOROLA Rbl 69
Contextual Info: MOTOROLA SC XSTRS/R F 15E I b3b7354 GGflt,2bD 1 I r-3r-/3 M A X I M U M R A T IN G S Symbol Value Unit Coliector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage Vc b o 40 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc Total Device Dissipation @ T>\ = 26°C Derate above 25°C

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MTP50N05

Abstract: l0134 CU904 CASE221D-02
Contextual Info: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate

2955E

Abstract: MTA2955E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM

H16S

Abstract: je210
Contextual Info: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

MD918AB

Contextual Info: MOTGRCLA SC 12E D I b3t,72SM DQ0tS13 XSTRS/R F MD918A MD918B M A X I M U M R A T IN G S Sym bol Value Unft Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCES 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Collector Current — Continuous 'c 50 mAdc

BCY791x

Abstract: bcy791 BCV79-VII BCY79X BCY79IX BCY79-X BCY79 BCY79-VIII BCY78 bcy78 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b3fci72S4 QGflt.M73 7 | r -y t - z I BCY78-VII, -Vili, -IX, -X BCY79-VII, -Vili, -IX, -X MAXIM UM RATINGS R a tin g Coliector-Em itter Voltage S ym b o l BCY 78 BCY 79 U n it VCEO 32 45 Vdc Co llector-Em ittar Voltage R B E 10 Ohm s

2n5680

Abstract: 2n5680 motorola 2N5679 MOTOROLA
Contextual Info: 2N5415, 2N5416 For Specifications, See 2N3439 Data. 2N5581/82 For Specifications, See 2N2218.A Data. M A X IM U M RATINGS 2N5680 2N5682 Untt 120 Vdc 120 Vdc Symbol 2N5679 2N5681 Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Emitter-Base Voltage

Contextual Info: MOTOROLA SC ÍXSTRS/R F> HbE D Order this data sheet by MTH6N100E/D b3b72S4 QÜ'lQ'nb 4 MOTOROLA • i SEMICONDUCTOR S TECHNICAL DATA ■ MTH6N100E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silico n Gate T M O S P O W E R FET