2N4015
Abstract: 2N4015 MOTOROLA 2n4016
Contextual Info: M Q T OR CL A SC XSTRS/R F D | b3b75SM DGflbBTS 7 | M AXIM UM RATIN GS Symbol Value Unit Collector-Emitter Voltage VcEO 60 Vdc Collector 1 to Collector 2 Voltage Voltage Rating and Lead to Case VC1C2 ±200 ±200 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage
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b3b75sm2n40152n40162n4015 motorola |
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transistor k 425
Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED
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r-33-73bu522bu522abu522b+7transistor k 425sc 107 transistornpn, transistor, sc 107 bbu522 transistortransistor 0190c107m221a-04
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TZ 1167
Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection
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b3b75smtz 1167bu208du/25/20/tn26/15/850/tz 1167 |
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MJF16006A
Abstract: vqe 14e wMR918 MTP8P10 lr 2905 transistor AM503 MUR8100 P6302 MJF16006 TCA 700 y
Contextual Info: motorola sc xstrs / r IME D I b3b75SM OOIGMB? 1 | f Order this data sheet by MJF16006A/D MOTOROLA B SEMICONDUCTOR " P -3 3 -II TECHNICAL DATA MJF16006A Designer's Data Sheet Full Pak N PN S ilicon P o w er Transistor 1.0 kV Switchm ode III Series For Isolated Package Applications
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b3b75smmjf16006a/d33-iimjf16006a+11an1040c64449vqe 14ewmr918mtp8p10lr 2905 transistoram503mur8100p6302mjf16006tca 700 y
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D2369
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b75SM OO' i S b E M MOTOROLA T «flO Tb 3-JZZ5' SEMICONDUCTOR TECHNICAL DATA 0H0 PRELIMINARY DATA MMCM2369AHXV/HS (SINGLE) MD2369AFHXV/HS (DUAL) MQ2369AHXV/HS (QUAD) m m Discrete Military Operation PROCESSED TO MIL-S-19500/317
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b3b75smmmcm2369ahxv/hsmd2369afhxv/hsmq2369ahxv/hs+5mil-s-19500/317mmcm2369amd2369afmq2369ad2369
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C4171
Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
Contextual Info: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s
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mj6308/dmj63082n6308c4171+7mci4552n6308 transistor replacementtwo transistor flybackmje16106am503mj16006mtp8p10
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MTP10N06E
Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s
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0cn0g33mtm10n06e221a04mtp10n06e+4221a-0472sman569evod
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mt 1389 de
Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B
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3b72s4mm3735mm3737mil-s-19500/395b+8o-116mt 1389 demt 1389 de icns 8002 1151mt 1389 de motorola2n37372n3735to-206ab
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3203 MOSFET
Abstract: MOTOROLA T3E IM40t AN569 MTM15N40E TMOS power FET motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bfiE » • h3b.7ESM GQTflST3 T32 noTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM15IM40E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed for high voltage, high speed
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b3b7254mtm15n40e-ddtfis111q000+63203 mosfetmotorola t3eim40tan569tmos power fetmotorola mosfet
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2N3720
Abstract: 2n3867
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b 3 fc,7 2 S 4 Q 0 ÛMM 7 7 5 | 2N3719, 2N3720 2N3867, 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and highfrequency amplifier applications.
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2n37192n37202n38672n3868+12n6303
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mfw transistor
Contextual Info: MOTOROLA SC XSTRS/R F 2bE D m {^ 7 2 5 1 * 00=10527 2 MOTOROLA SEM ICO NDUCTOR. .- . TECHNICAL DATA 'T - V S - iS 1 lt> mfw DM0 PRELIMINARY DATA MRH280NHXV, MRH280NHS PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR
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mrh280nhxvmrh280nhsmil-s-1950070vdc+3b3b75smmrh240nhxvmfw transistor
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