2N4015
Abstract: 2N4015 MOTOROLA 2n4016
Contextual Info: M Q T OR CL A SC XSTRS/R F D | b3b75SM DGflbBTS 7 | M AXIM UM RATIN GS Symbol Value Unit Collector-Emitter Voltage VcEO 60 Vdc Collector 1 to Collector 2 Voltage Voltage Rating and Lead to Case VC1C2 ±200 ±200 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage
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b3b75SM
2N4015
2N4016
2N4015 MOTOROLA
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transistor k 425
Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED
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r-33-73
BU522
BU522A
BU522B
BU522)
BU522A)
BU522B)
BU522A,
transistor k 425
sc 107 transistor
npn, transistor, sc 107 b
BU522 transistor
transistor 0190
C107M
BU522
BU522B
221A-04
BU522A
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TZ 1167
Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection
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b3b75SM
TZ 1167
bu208D
U/25/20/TN26/15/850/TZ 1167
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C4171
Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
Contextual Info: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s
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MJ6308/D
MJ6308
2N6308
2N6308
MJ6308
C4171
MCI455
2n6308 TRANSISTOR REPLACEMENT
two transistor flyback
MJE16106
AM503
MJ16006
MTP8P10
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MTP10N06E
Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s
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0Cn0G33
MTM10N06E
221A04
MTP10N06E
MTP10N06E
221A-04
72SM
AN569
MTM10N06E
evod
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mt 1389 de
Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B
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3b72S4
MM3735
MM3737
MIL-S-19500/395B
O-116)
mt 1389 de
mt 1389 de ic
NS 8002 1151
mt 1389 de motorola
2N3737
2N3735
TO-206AB
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3203 MOSFET
Abstract: MOTOROLA T3E IM40t AN569 MTM15N40E TMOS power FET motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bfiE » • h3b.7ESM GQTflST3 T32 noTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM15IM40E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed for high voltage, high speed
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b3b7254
MTM15N40E
-DDTfiS11)
1Q000
3203 MOSFET
MOTOROLA T3E
IM40t
AN569
MTM15N40E
TMOS power FET
motorola mosfet
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