B3 SMD Search Results

Contextual Info: CARDINAL COMPONENTS Series CX2016 SMD CRYSTAL Ultrathin thickness 0.45mm. Automatic mounting is possible. Reflow is possible RoHs compliant and lead free. Part Numbering Example: Z CX2016 CX2016Z - A0 - B3 C3 -150 - 16.0 D12 B3 A0 C3 16.0 150 SERIES ADDED FEATURES

Contextual Info: M ilita ry 5 4 F 8 6 MOTOROLA Quad 2-In p u t E xclusive OR G ate MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/34501 LOGIC DIAGRAM vcc A4 Y4 B3 A3 Y3 AVAILABLE AS: 1 JAN: JM38510/34501BXA 2) SMD: N/A 3) 883: 54F86/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C

smd n10

Abstract: transistor smd marking CR N10 SMD n10 smd MARKING f4 smd transistor HC49 smd smd marking N10 transistor smd cr
Contextual Info: C A L IB E R E L E C T R O N IC S IN C . specifications subject to change * revision 3-2003 C, CS, CR Series B3 HC-49/US SMD Microprocessor Crystals PART NUMBERING GUIDE Environmental/Mechanical Specifications on page F5 C A 32 C 3 - 30.000MHz Package C =HC49/US SMD 4.50mm max. ht.

38510/31004

Abstract: 54ls08 1N3064
Contextual Info: M ilitary 5 4 L S 0 8 M O TO R O LA Quad 2-Input P o sitiv e AND G a te MP0 mini ELECTRICALLY TESTED PER: MIL-M-38510/31004 LOGIC DIAGRAM Vcc B4 A4 Y4 [Tri [ì 3i [121 im B3 A3 nói m Y3 m AVAILABLE AS: 1 JAN: JM38510/31004BXA 2) SMD: N/A 3)883: 54LS08/BXAJC

JM38510 motorola

Abstract: BXAJC 54LS00 54LS00/BCBJC
Contextual Info: M M O TO R O LA M ilita ry 5 4 L S 0 0 Q u ad 2 -In p u t NAND G a t e MP0 unni ELECTRICALLY TESTED PER: MIL-M-38510/30001 LOGIC DIAGRAM Vcc B4 A4 Y4 B3 A3 Y3 AVAILABLE AS: 1) JAN: JM38510/30001BXA 2) SMD: N/A 3)883: 54LS00/BXAJC X = CASE OUTLINE AS FOLLOWS:

1048C

Contextual Info: ispLSI and pLSI 1048C ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool Output Routing Pool F7 F6 F5 F4 F3 F2 F1 F0 E7 E6 E5 E4 E3 E2 E1 E0 D7 A2 A4 IG N D Q Logic Global Routing Pool GRP A5 A6 A7 D B0 B1 B2 B3 B4 B5 B6 B7

diode b34

Abstract: diode u2 a54 0.01MF AMD C32 CR0805 surface mount transistor A48 surface mount transistor A61 b34 diode B34 motorola sn74ls574
Contextual Info: P3V VIO P2 P1 3 5 6 INTA# 4 TDO 5 6 INTA# PCI_5V 7 X7 7 X10 X50 8 8 TOOL1 B2 TOOL_130 TOOL_130 B3 B4 C51 B5 0.1 B6 C15 0.1 0.1 CC0805 C19 CC0805 CC0805 B8 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 A47 A48 A49 A50 A51 A52

SMD ZENER DIODE MARKING CODE G3

Abstract: marking code gc SMD zener PZU11 zener diode SMD marking code 27 4B pzuxb smd marking KD SMD MARKING GP 728 smd marking KH Zener diode smd marking h5 PZU13
Contextual Info: PZUxB series Single Zener diodes in a SOD323F package Rev. 01 — 7 March 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface Mounted Device (SMD) plastic package.

smd diode 2ba

Abstract: yt 1208 diode Zener diode smd marking code WN Zener diode smd marking code nu DIODE smd marking CODE NZ Zener diode smd marking code .18 marking code y2 SMD Transistor marking LZ smd diode SOD323 marking code ya SMD Transistor smd diode code B2
Contextual Info: PZUxBA series Single Zener diodes Rev. 01 — 19 September 2008 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323 SC-76 very small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power

SMD T28

Abstract: 5962F9669601QXC 5962F9669601QYC 5962F9669601VXC 5962F9669601VYC HS0-9008RH-Q HS1-9008RH-8 HS-9008RH CDIP2-T28
Contextual Info: HS-9008RH TM Data Sheet August 1999 Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital Converter itle S08R bt adian rded OS it sh a-toginrter utho ) eyrds terrpoion, inctor, dian rded, , d • Electrically Screened to SMD # 5962-96696 The HS-9008RH design differs substantially from most other

5962F9670301VCC

Abstract: 5962F9670301VXC ACS03HMSR ACS03MS
Contextual Info: ACS03MS Radiation Hardened Quad 2-Input NAND Gate with Open Drain January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan

smd transistor A6 SUB

Abstract: 5962F9670701VRC 5962F9670701VXC ACS245HMSR ACS245MS 516B2
Contextual Info: ACS245MS Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver January 1996 tle S2 S ia- Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96707 and Intersil’ QM Plan

CLV6A-FKB-CK1P1G1BB7R3R3

Abstract: cree uv LED SMD CODE G7 UV led 280 nm peak cree led smd 4600 UV led 280 nm peak mW CLV6A-FKB-CK1P1G1BB7R3R3, Cree optics smd code book B3
Contextual Info: Cree PLCC6 3-in-1 SMD LED CLV6A-FKB Data Sheet These SMD LEDs are packaged in an industry-standard PLCC6 package. These high-performance, tricolor SMT LEDs are designed to work in a wide range of applications. A wide viewing angle and high brightness make

Contextual Info: Cree PLCC6 3 in 1 SMD LED CLP6C-FKB Data Sheet Cree PLCC full-color LEDs offer high-intensity light output and a wide viewing angle in an industry-standard package. Designed to work in a wide array of environmental conditions, Cree PLCC full-color LEDs are suited for

CLP6C-FKB

Contextual Info: CLD-CT933.002 PRODUCT FAMILY DATA SHEET Cree PLCC6 3 in 1 SMD LED CLP6C-FKB PRODUCT DESCRIPTION FEATURES APPLICATIONS Cree PLCC full-color LEDs offer high- • Size mm :6.0 x 5.0 • Full-Color Video Screen intensity light output and a wide • Dominant Wavelength:

B 790 0029

Contextual Info: Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK SMD-220 (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625)

SMD AK

Contextual Info: CLD-CT1165.005 PRODUCT FAMILY DATA SHEET Cree PLCC4 3 in 1 SMD LED CLVBA-FKA PRODUCT DESCRIPTION FEATURES APPLICATIONS These SMD LEDs are packaged in an • Size mm :3.2 x 2.8 • Full-Color Video Screen • Dominant Wavelength: Red (619 - 624nm) Green (520 - 540nm)

TCR1210

Abstract: draloric cr Draloric P4
Contextual Info: EIN UNTERNEHMEN VON DRALORIC Thick Film Flat Resistor, adjustable T SMD TCR. Features • resistor can be trimmed to required value after insertion • for applications in precision circuitry where relative tolerances can be compensated by trimming Style

.B07 smd

Contextual Info: HS-82C08RH 3 Radiation Hardened 8-Bit Bus Transceiver February 1996 Functionai Diagram Features • Devices QML Qualified in Accordance With MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95714 and Harris’ QM Plan

CIE1931

Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA3010RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

APHK1608RWC

Abstract: APHK1608RWC-A BTA12-700BW CIE1931
Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHK1608RWC/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

CIE1931

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

IDC2000

Abstract: CIE1931
Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

LM 385 N

Abstract: CIE1931
Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.