B3 SMD Search Results

b3 smd transistor

Abstract: smd diode B3 HP4192A HP4192 smd b3 smd transistor b3 B3 smd b3 smd diode smd resistance 35uH
Contextual Info: SMD Data Line EMI Filter – SBCB Series Electrical Characteristics KHz 0.6V Inductance L(µH) DC Resistance (Ω) Max 100 25~50 0.07 Test Frequency Part Number SBCB1104RIT-330-B3-N Test Instruments：HP4192A LF Impedance Analyzer SBCB1104RI-330-B3-N 40 35

Contextual Info: CARDINAL COMPONENTS Series CX2016 SMD CRYSTAL Ultrathin thickness 0.45mm. Automatic mounting is possible. Reflow is possible RoHs compliant and lead free. Part Numbering Example: Z CX2016 CX2016Z - A0 - B3 C3 -150 - 16.0 D12 B3 A0 C3 16.0 150 SERIES ADDED FEATURES

Contextual Info: CARDINAL COMPONENTS SMD CRYSTAL Series: CX1612 Ultrathin thickness 0.32 mm. Automatic mounting is possible. Reflow is possible RoHs compliant and lead free. Part Numbering Example: Z SERIES CX1612Z - A0 - B3 C3 -150 - 16.0 D12 B3 A0 C3 150 16.0 ADDED FEATURES OPERATING TEMP. STABILITY TOLERANCE RESISTANCE FREQUENCY

Contextual Info: Package outline CFP15: plastic, thermal enhanced ultra thin SMD package; 3 leads; body: 5.8 x 4.3 x 0.78 mm SOT1289 b b2 2x b1 3 L 2 e L1 L2 1 (2x) b3 (2x) b3 D1 E C A D 1 3 2 2.5 Dimensions (mm are the original dimensions) Unit A max nom 0.78 min mm C D

SS0520

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SCHOTTKY BARRIER DIODES SS0520 - SS0540 SOD-123 Formed SMD Package Marking: As indicated below with cathode band Marking SS0520 - B2 SS0530 - B3 SS0540 - B4

SS0540

Abstract: b4 smd diode smd 123 SS0520 SS0530 TYP170 continental SOD123 Semiconductor smd marking BY
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SCHOTTKY BARRIER DIODES SS0520 - SS0540 SOD-123 Formed SMD Package Marking: As indicated below with cathode band Marking SS0520 - B2 SS0530 - B3 SS0540 - B4

smd diode B3

Abstract: GHB-1206L-B3
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.

Contextual Info: MOTOROLA Military 54F27 Advance Information Triple 3-Input NOR Gate ELECTRICALLY TESTED PER: MPG54F27 AVAILABLE AS: 1 JAN: • 2) SMD: » 3)8830: * LOGIC DIAG R AM Vcc h Cl Y1 C3 B3 pii nn n h A3 Y3 m [T| X = CASE OUTLINE A S FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D

Contextual Info: M ilita ry 5 4 F 8 6 MOTOROLA Quad 2-In p u t E xclusive OR G ate MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/34501 LOGIC DIAGRAM vcc A4 Y4 B3 A3 Y3 AVAILABLE AS: 1 JAN: JM38510/34501BXA 2) SMD: N/A 3) 883: 54F86/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C

smd n10

Abstract: transistor smd marking CR N10 SMD n10 smd MARKING f4 smd transistor HC49 smd smd marking N10 transistor smd cr
Contextual Info: C A L IB E R E L E C T R O N IC S IN C . specifications subject to change * revision 3-2003 C, CS, CR Series B3 HC-49/US SMD Microprocessor Crystals PART NUMBERING GUIDE Environmental/Mechanical Specifications on page F5 C A 32 C 3 - 30.000MHz Package C =HC49/US SMD 4.50mm max. ht.

Contextual Info: MOTOROLA M ilita ry 54F 3 2 Quad 2-In p u t OR G ate MPO ELECTRICALLY TESTED PER: MIL-M-38510/33501 HUM LOGIC DIAGRAM VqC A4 B4 Y4 B3 A3 Y3 AVAILABLE AS: 1 JAN: JM38510/33501BXA 2) SMD: N/A 3) 883: 54F32/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CEROIP: C

38510/31004

Abstract: 54ls08 1N3064
Contextual Info: M ilitary 5 4 L S 0 8 M O TO R O LA Quad 2-Input P o sitiv e AND G a te MP0 mini ELECTRICALLY TESTED PER: MIL-M-38510/31004 LOGIC DIAGRAM Vcc B4 A4 Y4 [Tri [ì 3i [121 im B3 A3 nói m Y3 m AVAILABLE AS: 1 JAN: JM38510/31004BXA 2) SMD: N/A 3)883: 54LS08/BXAJC

JM38510 motorola

Abstract: 54LS12 Y1 smd BXAJC
Contextual Info: g M ilitary 5 4 L S 1 2 M O TO R O LA Triple 3-Input P o sitiv e NAND G a te MP0 ELECTRICALLY TESTED PER: MIL-M-38510/30006 mini LOGIC DIAGRAM V cc C1 Y1 C3 B3 A3 Y3 AVAILABLE AS: 1) JAN : JM38510/30006BXA 2) SMD: N/A 3 )8 8 3 : 54LS12/BXAJC X = CASE OUTLINE AS FOLLOW S:

JM38510 motorola

Abstract: BXAJC 54LS00 54LS00/BCBJC
Contextual Info: M M O TO R O LA M ilita ry 5 4 L S 0 0 Q u ad 2 -In p u t NAND G a t e MP0 unni ELECTRICALLY TESTED PER: MIL-M-38510/30001 LOGIC DIAGRAM Vcc B4 A4 Y4 B3 A3 Y3 AVAILABLE AS: 1) JAN: JM38510/30001BXA 2) SMD: N/A 3)883: 54LS00/BXAJC X = CASE OUTLINE AS FOLLOWS:

1048C

Contextual Info: ispLSI and pLSI 1048C ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool Output Routing Pool F7 F6 F5 F4 F3 F2 F1 F0 E7 E6 E5 E4 E3 E2 E1 E0 D7 A2 A4 IG N D Q Logic Global Routing Pool GRP A5 A6 A7 D B0 B1 B2 B3 B4 B5 B6 B7

Contextual Info: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

diode b34

Abstract: diode u2 a54 0.01MF AMD C32 CR0805 surface mount transistor A48 surface mount transistor A61 b34 diode B34 motorola sn74ls574
Contextual Info: P3V VIO P2 P1 3 5 6 INTA# 4 TDO 5 6 INTA# PCI_5V 7 X7 7 X10 X50 8 8 TOOL1 B2 TOOL_130 TOOL_130 B3 B4 C51 B5 0.1 B6 C15 0.1 0.1 CC0805 C19 CC0805 CC0805 B8 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 A47 A48 A49 A50 A51 A52

17V358

Abstract: v358 XR17V35x RXB15 SP336 4.7uH c79213 CTS5-SB3 cd6s ED1516-ND
Contextual Info: 1 C 1 1 1 5 1 1 1 1 1 1 B 4 2 1 C16 1 C32 TP31 B12 RSVD B13 GND REFCLK+ A13 CLK+ RX+ B14 PET+ REFCLKA14 CLK- RXB15 PETGND A15 B16 GND PER+ A16 TX+ B17 PRSNT#2 HOT PLUG DETECT PERA17 TX- B18 GND GND A18 C31 C46 +12V_4 A2 B3 +12V_3 +12V_5 A3 B4 GND GND A4 B5

1032-90LT

Contextual Info: ispLSI and pLSI 1032 ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool IG N D7 D6 D5 D4 D3 D2 D1 D0 ES A2 Logic A3 Array D A4 A5 C5 D Q D Q GLB C4 C3 D Q EW Output Routing Pool C6 D Q C2 C1 A6 Global Routing Pool GRP C0 B0 B1 B2 B3 B4 B5 B6 B7

surface mount transistor A55

Abstract: surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30
Contextual Info: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 1 X12 1 X10 7 B7 1 X50 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# 18 B18 REQ# A19 19 19 B19 AD30 AD26

2n2222 sot23

Abstract: Z117 Z123 Diode diode z104 a105 transistor Z16 SOT23 2n2222 sot-23 c60 equivalent transistor z5 b49 diode
Contextual Info: P3V VDD VIO VDD P2 P1 NDA # P3V A1 1 VIO VIO 1 B1 TRST# A2 2 TCK A3 3 A4 4 2 B2 TOOL1 3 B3 TMS TDO A5 5 C52 10 16V 2 7227 6 B6 INTA# A7 7 7 B7 X28 A8 8 A9 9 9 B9 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# A19 19 19 B19 AD30 AD26 25 B25

surface mount transistor A48

Abstract: CR0805 diode b26 8q diode sot23 AD11 AD30 MAGIC R30
Contextual Info: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 C20 10 16V 2 7227 6 B6 INTA# A7 7 1 X12 1 X10 7 B7 1 X50 1 1 C19 5 B5 A5 5 1 C54 10 16V 2 7227 C53

208H

Contextual Info: 2 . S ch e m atic: 1. M e c h a n ic a l D im e n s i o n s : 0 0 .3 3 0 08.38 o- 0 0 .1 9 0 «J4.B3 I I ' u a CO o a <N U"] 0.510 Max 12.95 Max o- 3. Electrical Specifications: @25°C 0.1 00 0 .1 1 5 ~ l OCL: 22uH ±20% @100KHz 0.1V, OAdc \ 2.92 Isat: 1.6Adc Based on 10% Drop in OCL

J4B3

Abstract: 208H mar 752
Contextual Info: 2 . S ch e m atic: 1. M e c h a n ic a l D im e n s i o n s : 0 0 .3 3 0 08.38 o- 0 0 .1 9 0 «J4.B3 I I ' u a CO o a <N U"] 0.510 Max 12.95 Max o- 3. Electrical Specifications: @25°C 0 .1 0 0 ~ l \ 0 .1 1 5 2.92 OCL: 33uH ±20% @100KHz 0.1V, OAdc Isat: 1.4-Adc with apx 10% drop in OCL