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    B072208 Search Results

    B072208 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FET marking code ndew

    Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND250 DSFP-LND250 A091208 FET marking code ndew PDF

    Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


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    TN2124 DSFP-TN2124 B022309 PDF

    Contextual Info: VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain The Supertex VN2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure


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    VN2110 VN2110 DSFP-VN2110 A122308 PDF

    Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


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    TN2130 DSFP-TN2130 A022309 PDF

    VN2110K1-G

    Abstract: SOT23Die 125OC VN2110 VN2110ND
    Contextual Info: VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    VN2110 VN2110 DSFP-VN2110 A122308 VN2110K1-G SOT23Die 125OC VN2110ND PDF

    TN2106K1-G

    Abstract: TO-236A 125OC TN2106 TN2106N3-G
    Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2106 DSFP-TN2106 A091208 TN2106K1-G TO-236A 125OC TN2106 TN2106N3-G PDF

    SOT-23 IP

    Abstract: TP2104 Diode SOT-23 marking 3V
    Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    TP2104 DSFP-TP2104 A022309 SOT-23 IP TP2104 Diode SOT-23 marking 3V PDF

    DN3135K1-G

    Abstract: b1031 sot-89 MARKING CODE ab 125OC DN3135 DN3135N8-G
    Contextual Info: DN3135 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN3135 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    DN3135 DN3135 DSFP-DN3135 B103108 DN3135K1-G b1031 sot-89 MARKING CODE ab 125OC DN3135N8-G PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150 PDF

    marking N8 sot-23

    Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN5335 DSFP-TN5335 A050108 marking N8 sot-23 PDF

    tn2130k1-g

    Abstract: TN2130K1G
    Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2130 DSFP-TN2130 A091208 tn2130k1-g TN2130K1G PDF

    Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND250 DSFP-LND250 A103108 PDF

    sot 23 x 316

    Abstract: fet sot-89 marking code P-Channel FET 100v to92
    Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN5325 DSFP-TN5325 A091408 sot 23 x 316 fet sot-89 marking code P-Channel FET 100v to92 PDF

    SOT-23 IP

    Abstract: TN2130K1-G 125OC TN2130 mos n-channel SOT-23
    Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2130 DSFP-TN2130 A022309 SOT-23 IP TN2130K1-G 125OC TN2130 mos n-channel SOT-23 PDF

    Contextual Info: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    TP5322 TP5322 110pF DSFP-TP5322 B022309 PDF

    Contextual Info: TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2425 DSFP-TN2425 A091208 PDF

    mos fet marking k1

    Contextual Info: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    TP5335 DSFP-TP5335 A091508 mos fet marking k1 PDF

    b0915

    Contextual Info: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    TP5322 110pF DSFP-TP5322 B091508 b0915 PDF

    Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


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    TN2106 DSFP-TN2106 A091208 PDF

    sot-89 MARKING CODE ab

    Abstract: FET SOT-89 fet sot-89 marking code fet sot-89 product marking TN5335 TN5335K1-G TN5335N8-G FET SOT-89 N-Channel
    Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN5335 DSFP-TN5335 A091408 sot-89 MARKING CODE ab FET SOT-89 fet sot-89 marking code fet sot-89 product marking TN5335 TN5335K1-G TN5335N8-G FET SOT-89 N-Channel PDF

    jedec package TO-236AB

    Contextual Info: Package Outline 3-Lead TO-236AB SOT-23 Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch View B Top View View B View A - A Side View Symbol Dimension (mm) A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90


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    O-236AB OT-23) O-236, DSPD-3TO236ABK1, B072208. DSPD-3TO236ABK1 B072208 jedec package TO-236AB PDF

    TP0610T

    Contextual Info: TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    TP0610T DSFP-TP0610T A091408 PDF

    VP2110K1-G

    Abstract: sot-23 MARKING CODE GS 5
    Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    VP2110 DSFP-VP2110 A020408 VP2110K1-G sot-23 MARKING CODE GS 5 PDF

    Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2124 DSFP-TN2124 B091208 PDF