B 773 TRANSISTOR Search Results

Contextual Info: 00 31 6 0 3 773 Philips Sem iconductors M APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AUER PHILIPS/DISCRETE FEATURES b^E I> PINNING PIN • Low noise • Low intermodulation distortion DESCRIPTION Code: BFR90A/02 • High power gain

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

FR-Z024

Abstract: FR-PU01 FR-PU01E inverter fr-z Z024S FR-Z024S-0 VARISTOR thm freqrol fr-z024-s037k FR-Z024S-1
Contextual Info: Issued July 1992 013-854 Data Pack B Z024S transistor inverter Data Sheet Supplied by Mitsubishi Electric UK Ltd RS stock no. Mitsubishi part no. 0.37kW 718-767 FR-Z024S-0.37 0.75kW 718-773 FR-Z024S-0.75 1.5kW 718-789 FR-Z024S-1.5 2.2kW 718-795 FR-Z024S-2.2

FR-Z024

Abstract: FR-PU01 FR-Z024S-0 FR-PU01E VARISTOR thm FREQROL fr-z024-s037k inverter fr-z Z024S FR-Z024S-1
Contextual Info: Issued March 1997 232-3765 Data Pack B Z024S transistor inverter Data Sheet Supplied by Mitsubishi Electric UK Ltd RS stock no. Mitsubishi part no. 0.37kW 718-767 FR-Z024S-0.37 0.75kW 718-773 FR-Z024S-0.75 1.5kW 718-789 FR-Z024S-1.5 2.2kW 718-795 FR-Z024S-2.2

BFG425

Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

BF410

Abstract: BF410C BF410A BF410B BF410D
Contextual Info: 711002b G D b 7 M ö cJ 773 IPHIN BF410A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic T O -9 2 variant; intended fo r applications up to the V H F range. These FETs can be supplied in fou r lo s s groups. Special features are the low feedback capacitance and

TIPL773

Abstract: B 773 transistor TIPL773A
Contextual Info: TEXAS INSTR -COPTO} 8961726 b E Î F J f l T b l 7 ab Q0 3 7 D77 TEXAS IN S T R I 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature

germanium transistors NPN

Abstract: npn germanium germanium af transistors AC127 germanium transistor transistor germanium germanium germanium npn transistor 127 na Germanium Transistors
Contextual Info: NPN Germanium Transistors // fT <VCE “ o C om m on Characteristics < NPN G erm anium A F A llo y transistors in T 0 1 m etal case Cob V Cß = 6 V , l e = 0 1m A) 70 pF I 1 M Hz , M a xim um ratings C haracteristics @ T am^-= 25 °C p TOT 1 o -I Í Type

Contextual Info: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ji-MOSV T E N T A T IV E 2SK3443 High Speed Switching, High Current Applications Industrial Applications U nit in mm Switching Regulator, DC-DC Converter and Motor Drive Applications

sanyo S.E. 60 WF capacitors

Abstract: B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770-MAX773 MAX770 MAX771 MAX772 MAX773
Contextual Info: A M X I A I IVH S V or Adjustable, High-Efficiency, Low I q, Step-Up DC-DC Controllers These ICs use tiny external com ponents. Their high switching frequencies up to 300kHz allow surfacemount magnetics of 5mm height and 9mm diameter. The MAX770/MAX771/MAX772 accept input voltages

Contextual Info: 2SB1189 N 7 > V ^ £ /Transistors 9 Q R 1 1 A Q « w D • x tf$ *y 7 J i'y is -ïB P N P '> v = i> b 7 > y z 2 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. • fl-Jl^iäslil/D im ensions Unit : mm • ttft 1 )3 U -7 $ i*^ P c = 2 W T '< fe 5 0 (40 X

XWs transistor

Abstract: xws 03
Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C

mj 773

Abstract: 2SK3443
Contextual Info: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)

2SC1847

Abstract: panasonic fk 2SA886 NPN N37
Contextual Info: Power Transistors 2SC1847 2SC1847 Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA886 • Features • 4W output in com plem entary pair with 2SA886 • TO-126 package, no insulator n eeded w hen fixing to a h e at sink

Contextual Info: SGS-THOMSON SD1423 $ 7 . H D « E lL E T M D IB i RF & MICROWAVE TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS • ■ ■ ■ ■ ■ ■ 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION P o u t = 15 W MIN. WITH 8.0 dB GAIN

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.

transistor 9206

Abstract: B 773 transistor
Contextual Info: j Mm anäA MCP comDpanyÜ Radar Pulsed Power Transistor, 25W, 100ns Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M Features • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B r o a d b a n d C la s s C O p e r a tio n

3SK256

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR 3SK256 T V TU N ER , UHF RF AM PLIFIER APPLIC A TIO N S. • • • U n i t in m m Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ. Low Noise Figure

Lm 7011

Abstract: SN75110 mc34s MC3453
Contextual Info: APR 26 ’00 09:47 FR SPC TECHNOLOGY j uuuu .ul m . i IV 773 907 5180 TO 9011441132794279 P.02/05 ve.ivtc.fNe. ¿LM < a f <a 1 i su 3 j í íJ s a O l t í ü MOTOROLA SEMICONDUCTOR TECHNICAL DATA QUAD LINE DRIVER WITH COMMON INHIBIT INPUT MTTL COMPATIBLE QUAD UN£ DRIVER

TF1203

Abstract: MG30G6EL1
Contextual Info: TF1203 SOLID STATE GTR DRIVER MODULE GTR DRIVER TOSHIBA TF1203 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the optical isolator and GTR driver circuit. Using this driver, you can design high reliability and compact system.

Contextual Info: Philips Semiconductors bb 53^31 0031727 22 b PNP 1 GHz video transistors ^ N FEATURES WM A P X Product specification BFQ251; BFQ251A AUER PHILIPS/DISCRETE blE ]> PINNING • High breakdown voltages DESCRIPTION PIN » Low output capacitance 1 base • High gain bandwidth product

transistor t18 FET

Abstract: fet preamp mp sot 23 resistor 47k ECG2363 ECG2371 ECG2406 ECG2366 PNP UHF transistor ECG2364
Contextual Info: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts bvcbo Collector To Emitter Volts b v Ceo Base to Emitter Volts bvebo M ax. Collector Current Iç Amps Max. Device Dlss. PD

lN914

Abstract: TIP29 TIP29A TIP29B TIP29C TIP30
Contextual Info: TIP 29 Series NPN POWER TRANSISTORS 40-100 VOLTS 1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP30 SERIES The T IP 29 Series pow er transistors are designed for use in general purpose am plifier and switching applications. Features: • Designed for complementary use with TIP 30 series

bfq251

Abstract: bfq 85 BFQ231 BFQ251A
Contextual Info: bbSB'ìBl DG31727 Philips Semiconductors EEb WÊ APX PNP 1 GHz video transistors ^ — Product specification BFQ251; BFQ251A N AUER PHILIPS/DISCRETE FEATURES blE ]> PINNING • High breakdown voltages » Low output capacitance • High gain bandwidth product