2SC1847 Search Results

2SC1847

Abstract: 2SA886
Contextual Info: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

100 HFK

Abstract: 16Oi 2SA886 2SC1847 10 HFK
Contextual Info: _ PANASONIC IN DL /E LE K{ SE MI> 7EC D | b^32fiSM~DGG07t,S t> | ' T - 3 3 - H ‘ 2SA886 2SA886 ' > >J - I V 2SC1847 P N P 3 £ 's~f x — • ^ •J fé /S i P N P E p ita x ia l P la n a r Pow er Amplifier 'J > V 2 >J /'C om plem entary Pair with 2SC1847

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2

2SA886

Abstract: 2SC1847 2SA0886
Contextual Info: Power Transistors 2SC1847 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0886 2SA886 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2

2SC1847

Abstract: 2SA0886 2SA886
Contextual Info: Power Transistors 2SA0886 2SA886 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SA886

Abstract: 2SC1847
Contextual Info: Inchange Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN

2SA886

Abstract: 2SC1847
Contextual Info: AOK Product Specification AOK Semiconductor S ilicon PNP Power Transistors 2SA886 DESCRIPTION • With TO-126 package • Complement to type 2SC1847 • Low collector-emitter saturation voltage APPLICATIONS • For low-frequency power amplification PINNING

T1041

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • Output of 4 W can be obtained by a complementary pair with

2SC1847

Contextual Info: Power Transistors 2SC1847 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0886 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: Power Transistors 2SA0886 2SA886 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1847 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA0886

Abstract: 2SC1847
Contextual Info: Power Transistors 2SC1847 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0886 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

NPN 2A TO 126

Abstract: 2SC1847 2SA886
Contextual Info: SavantIC Semiconductor Product Specification 2SC1847 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA886 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: Power Transistors 2SA0886 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1847 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA886

Abstract: 2SC1847 2SA886V
Contextual Info: Power Transistors 2SA886 2SA886 Silicon PNP Epitaxial Planar Type P ackage Dim ensions A F Pow er Am plifier C om plem entary Pair with 2 S C 1 8 4 7 • Features • 4W output in complementary pair with 2SC1847 • TO-126 package, no insulator needed when fixing to a heat sink

2SC1847

Abstract: panasonic fk 2SA886 NPN N37
Contextual Info: Power Transistors 2SC1847 2SC1847 Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA886 • Features • 4W output in com plem entary pair with 2SA886 • TO-126 package, no insulator n eeded w hen fixing to a h e at sink

2SC1847

Abstract: ta 6932 2SA886
Contextual Info: Power T ransistors 2SC1847 2SC1847 Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA886 Unit ; mm 3 . 2 ± 0 .2 8.0!S1 • Features • 4W output in complementary pair with 2SA886 • TO-126 package, no insulator needed when fixing to a heat sink

bt35f

Abstract: IB-015 i3205S 2SA886 2SC1847 B1326 BT35
Contextual Info: Power T ransistors 2SA886 2SA886 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC1847 • Features • 4W output in com plem entary pair with 2SC1847 • T O -126 package, no insulator needed w hen fixing to a heat sink

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: Power Transistors 2SA0886 2SA886 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1847 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se

2SC1847

Abstract: 2SA0886
Contextual Info: Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • Output of 4 W can be obtained by a complementary pair with 2SA0886 • TO-126B package which requires no insulation plate for installation to the heat sink

2SA886

Abstract: 2SC1847
Contextual Info: SavantIC Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SC1847

Abstract: 2SA886 2SC1847 R
Contextual Info: Inchange Semiconductor Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION