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    B 773 TRANSISTOR Search Results

    B 773 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B 773 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FR-Z024

    Abstract: FR-PU01 FR-PU01E inverter fr-z Z024S FR-Z024S-0 VARISTOR thm freqrol fr-z024-s037k FR-Z024S-1
    Text: Issued July 1992 013-854 Data Pack B Z024S transistor inverter Data Sheet Supplied by Mitsubishi Electric UK Ltd RS stock no. Mitsubishi part no. 0.37kW 718-767 FR-Z024S-0.37 0.75kW 718-773 FR-Z024S-0.75 1.5kW 718-789 FR-Z024S-1.5 2.2kW 718-795 FR-Z024S-2.2


    Original     		PDF Z024S FR-Z024S-0 FR-Z024S-1 FR-Z024S-2 FR-AU01 FR-PU01E FR-Z024 FR-PU01 FR-PU01E inverter fr-z VARISTOR thm freqrol fr-z024-s037k

    FR-Z024

    Abstract: FR-PU01 FR-Z024S-0 FR-PU01E VARISTOR thm FREQROL fr-z024-s037k inverter fr-z Z024S FR-Z024S-1
    Text: Issued March 1997 232-3765 Data Pack B Z024S transistor inverter Data Sheet Supplied by Mitsubishi Electric UK Ltd RS stock no. Mitsubishi part no. 0.37kW 718-767 FR-Z024S-0.37 0.75kW 718-773 FR-Z024S-0.75 1.5kW 718-789 FR-Z024S-1.5 2.2kW 718-795 FR-Z024S-2.2


    Original     		PDF Z024S FR-Z024S-0 FR-Z024S-1 FR-Z024S-2 FR-AU01 FR-PU01E FR-Z024 FR-PU01 FR-PU01E VARISTOR thm FREQROL fr-z024-s037k inverter fr-z

    BFG425

    Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly


    Original     		PDF RNR-T45-96-B-773 14-Nov-1996 BFG425W BFG425W BFG400W 100KHz BFG425 BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773

    k344

    Abstract: No abstract text available
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: Yfs = 9 S (typ.)


    Original     		PDF 2SK3443 k344

    Untitled

    Abstract: No abstract text available
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)


    Original     		PDF 2SK3443

    mj 773

    Abstract: 2SK3443
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)


    Original     		PDF 2SK3443 mj 773 2SK3443

    2SK3443

    Abstract: No abstract text available
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)


    Original     		PDF 2SK3443 2SK3443

    2SK3443

    Abstract: No abstract text available
    Text: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • · · · Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ïYfsï = 9 S (typ.)


    Original     		PDF 2SK3443 2SK3443

    marking code 93

    Abstract: Q68000-A6479 Q68000-A6483 93 MARKING S2E MARKING MARKING 93 SMBTA43 NPN S2e s2e sot-23
    Text: PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    Original     		PDF Q68000-A6479 Q68000-A6483 OT-23 marking code 93 Q68000-A6479 Q68000-A6483 93 MARKING S2E MARKING MARKING 93 SMBTA43 NPN S2e s2e sot-23

    Untitled

    Abstract: No abstract text available
    Text: 00 31 6 0 3 773 Philips Sem iconductors M APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AUER PHILIPS/DISCRETE FEATURES b^E I> PINNING PIN • Low noise • Low intermodulation distortion DESCRIPTION Code: BFR90A/02 • High power gain


    OCR Scan     		PDF BFR90A BFR90A/02 ON4184) BFQ51.

    314 optocoupler

    Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
    Text: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with


    OCR Scan     		PDF OF4114 OT90B CNY17-3, 14CNP. MSB051 OF4114 OT212. 74bbflSl 0DD4fl03 314 optocoupler 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73

    BF410

    Abstract: BF410C BF410A BF410B BF410D
    Text: 711002b G D b 7 M ö cJ 773 IPHIN BF410A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic T O -9 2 variant; intended fo r applications up to the V H F range. These FETs can be supplied in fou r lo s s groups. Special features are the low feedback capacitance and


    OCR Scan     		PDF 711002b BF410A BF410 BF410C BF410B BF410D

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376

    TIPL773

    Abstract: B 773 transistor TIPL773A
    Text: TEXAS INSTR -COPTO} 8961726 b E Î F J f l T b l 7 ab Q0 3 7 D77 TEXAS IN S T R I 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature


    OCR Scan     		PDF TIPL773, TIPL773A, TIPL773B TIPL773 T-33-29 B 773 transistor TIPL773A

    germanium transistors NPN

    Abstract: npn germanium germanium af transistors AC127 germanium transistor transistor germanium germanium germanium npn transistor 127 na Germanium Transistors
    Text: NPN Germanium Transistors // fT <VCE “ o C om m on Characteristics < NPN G erm anium A F A llo y transistors in T 0 1 m etal case Cob V Cß = 6 V , l e = 0 1m A) 70 pF I 1 M Hz , M a xim um ratings C haracteristics @ T am^-= 25 °C p TOT 1 o -I Í Type


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ji-MOSV T E N T A T IV E 2SK3443 High Speed Switching, High Current Applications Industrial Applications U nit in mm Switching Regulator, DC-DC Converter and Motor Drive Applications


    OCR Scan     		PDF 2SK3443

    sanyo S.E. 60 WF capacitors

    Abstract: B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770-MAX773 MAX770 MAX771 MAX772 MAX773
    Text: A M X I A I IVH S V or Adjustable, High-Efficiency, Low I q, Step-Up DC-DC Controllers These ICs use tiny external com ponents. Their high switching frequencies up to 300kHz allow surfacemount magnetics of 5mm height and 9mm diameter. The MAX770/MAX771/MAX772 accept input voltages


    OCR Scan     		PDF MAX770-MAX773 110nA 300kHz) MAX770/MAX771/MAX772 MAX770P MAX773 sanyo S.E. 60 WF capacitors B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770 MAX771 MAX772 MAX773

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 N 7 > V ^ £ /Transistors 9 Q R 1 1 A Q « w D • x tf$ *y 7 J i'y is -ïB P N P '> v = i> b 7 > y z 2 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. • fl-Jl^iäslil/D im ensions Unit : mm • ttft 1 )3 U -7 $ i*^ P c = 2 W T '< fe 5 0 (40 X


    OCR Scan     		PDF 2SB1189 2SD1767. 25ions

    XWs transistor

    Abstract: xws 03
    Text: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C


    OCR Scan     		PDF 10ki2) Q62702-C2354 OT-23 XWs transistor xws 03

    2SC1847

    Abstract: panasonic fk 2SA886 NPN N37
    Text: Power Transistors 2SC1847 2SC1847 Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA886 • Features • 4W output in com plem entary pair with 2SA886 • TO-126 package, no insulator n eeded w hen fixing to a h e at sink


    OCR Scan     		PDF 2SC1-847 2SC1847 2SA886 O-126 2SC1847 panasonic fk 2SA886 NPN N37

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1611 2SD1611 Silicon Trip le -D iffu se d Planar Darlington Type P ack age D im ension s P ow e r A m plifier U n i t 1 mm • Fe a tu re s • H igh D C c u r re n t gain 3.7m ax 8 .7 m ax . 1^1 Ii f e • High c o lle c to r-b a s e v o ltag e


    OCR Scan     		PDF 2SD1611 001fc

    B 773 transistor

    Abstract: ED1702N ED1702 TRANSISTOR ED-1702 ED1702L ED1702M ED1702 ed1802 transistor ed1702 ED1702 PHILIPS transistor
    Text: Philips Semiconductors Product specification NPN general purpose transistor ED1702 FEATURES PINNING • Low current max. 500 mA PIN • Low voltage (max. 25 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector • General purpose switching and amplification.


    OCR Scan     		PDF ED1702 ED1802. 100AMETER ED1702K ED1702L ED1702M ED1702N ED17020 ED1702P ED1702Q B 773 transistor ED1702 TRANSISTOR ED-1702 ED1702 ed1802 transistor ed1702 ED1702 PHILIPS transistor

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON SD1423 $ 7 . H D « E lL E T M D IB i RF & MICROWAVE TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS • ■ ■ ■ ■ ■ ■ 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION P o u t = 15 W MIN. WITH 8.0 dB GAIN


    OCR Scan     		PDF SD1423 800-960MHZ SD1423 SD1424.

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.


    OCR Scan     		PDF bbS3T31 2N3904 2N3906.