AVALANCHE TRANSISTOR Search Results

Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation *

AVALANCHE TRANSISTOR

Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators

Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators

Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche m ode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation

ZTX415

Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation

edge emitter LED

Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
Contextual Info: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators

Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation

FMMT415

Contextual Info: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation

AVALANCHE TRANSISTOR

Contextual Info: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers *

Contextual Info: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators

a2231

Abstract: laser LED AVALANCHE TRANSISTOR FMMT413 31AA u 413 DSA003693 CCP4 VF130
Contextual Info: SOT23 NPN SILICON PLANAR AVALANCHE PROVISIONAL FMMT413 TRANSISTOR DATASHEET ISSUE 2- MARCH I 1 1996 FEATURES * Avalanche * 50A Peak avalanche mode operation * Low inductance current E c packaging APPLICATIONS * Laser LED drivers * Fast edge * High speed PARTMARKING

K1 transistor

Contextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,

STK2N50

Contextual Info: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION

STP6N60FI

Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD2N50

Contextual Info: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD3N30

Contextual Info: STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 300 V < 1.4 Ω 3A TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STP20N06

Abstract: STP20N06FI
Contextual Info: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI VDSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP3N60

Abstract: stp3n60xi ISOWATT221
Contextual Info: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION

STP3N100

Abstract: STP3N100FI
Contextual Info: STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N100 STP3N100FI • ■ ■ ■ ■ ■ VDSS R DS on ID 1000 V 1000 V <5Ω <5Ω 3.5 A 2A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

MTP6N6

Abstract: MTP6N60
Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD17N05

Abstract: STD17N06
Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

LD18A

Abstract: STV18N20 DG73
Contextual Info: £jï SGS-THOMSON M@IMllLiCTl Gl<£i STV18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RDS on Id STV18N20 200 V < 0.18 ft 18 A • . . . . TYPICAL Rds(ON) = 0.145 Q AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 10OPC

P-032B

Abstract: P032B STK4N25
Contextual Info: STK4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N25 • ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED