AVALANCHE B00 Search Results

Contextual Info: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

UZ80A

Contextual Info: SGS-THOMSON £j ï ULKgraMOeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI • . . . . . . V dss RDS on Id 800 V 800 V <3 0 < 3 0. 3.8 A 2.4 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

9N80

Abstract: 9N80FI
Contextual Info: SGS-THOMSON ï ULKgraMOeS £j STH9N80 STH9N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E STH 9N 80 STH 9N 80FI • . . . . . . V dss RDS on Id 800 V 800 V < 1 Q. < 1 Q. 9 A 5 .6 A TYPICAL RDS(on) = 0.87 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STHV82

Abstract: sthv 82
Contextual Info: £jï 82 82 SGS-THOMSON ULKgraMOeS STHV STHV FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STHV82 S TH V82FI 800 V 800 V • . . . . . . RDS on < 2 0 < 2 0 Id 5 .5 A 3 .6 A TYPICAL RDS(on) = 1 -65 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON * 5 S T P 3 N 1 oo S T P 3 N 1 OOFI iL iO M iQ £ I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100 S TP 3N 100FI • ■ . ■ ■ . V dss R DS(on) Id 1000 V 1000 V < 5Q < 5 £2 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V

APT30M85BNR

Contextual Info: A dvanced P o w er Te c h n o l o g y * APT30M85BNR 300V APT3010BNR 300V POWER MOS IV' 40A 0.0850 35A 0.1000 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D All Ratings: Tc = 25°C unless otherwise specified.

H-312

Contextual Info: Data Sheet No. PD-9.679B INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHIM7250 IRHN8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10», MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: 7^2^537 OOMblfl? IDI •S6TH SGS-THOMSON S T P 3 N80XI id U O T * ! N - CHANNEL ENHANC EM ENT MODE POW ER MOS TRAN SISTO R TYPE STP3N80XI ■ . ■ ■ . ■ ■ V dss RDS on Id 800 V < 4 .5 n 1 .7 A TYPICAL RDS(on) = 3.9 Q AVALANCHE RUGGED TECHNOLOGY

5n90fi

Contextual Info: £ j ï SGS-THOMSON S T P 5N 90 S T P 5N 90FI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP5N 90 STP5N 90FI • . . . . . . V d ss RDS on Id 900 V 900 V < 2.4 Q. < 2.4 Q. 5 A 2.8 A TYPICAL RDS(on) = 1.9 £2 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N PROVISIONAL DATASHEET ISSUE A - OCTOBER 94 Di L i - — L I Gi Dì I I > I Si D2 I I 1 1 G? d2 1 1 S2 I I PARTMARKING DETAIL - M4206N ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L VALU E

Contextual Info: ¿57 S T P 2 N 80 S T P 2 N 8 0 FI S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N80 STP2N80FI V dss RDS on Id 800 V 800 V <7 a < 7 0. 2.4 A 1.5 A • TYPICAL R D S (on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: I n ter n a tio n a l C8204-1 S e m ic o n d u c to r , I n c , thru 4 0 0 M IL L IW A T T H E R M E T IC A L L Y S E A L E D G L A S S S IL IC O N lo w C8204-16 ZENER DIODES n o is e MAXIMUM RATINGS * FEATURES: Operating Tem perature: • Low Noise Avalanche Diodes

RURG6080

Contextual Info: RURG8070, RURG8080, RURG8090, RURG80100 HARRIS S E M I C O N D U C T O R 80A, 700V - 1000V Ultrafast Diodes April 1995 Package Features JEDEC STYLE 2 LEAD TO-247 • Ultrafast with Soft R • Operating Tem p eratu re. +175°C

Contextual Info: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C

STH5N90

Abstract: STH5N90FI transistor DI 468 circuit diagram application 100S
Contextual Info: I 7^23? 0045fl7b flOS • S G T H _ SGS-THOMSON ¡[LiOT «! STH5N90 STH5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH5N90 STH5N90FI ■ . . ■ . . ■ V dss RDS on Id 900 V 900 V < 2.4 n < 2.4 n 5.3 A 3.5 A TYPICAL R D S (o n ) = 1 .9 !)

8n80

Abstract: STW8N80 KT 0803 K
Contextual Info: £ STH8N80 FI STW8N80 SGS-THOMSON ï ULKgraMOeS j N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E STH 8N 80 STH 8N 80FI STW 8N80 • . . . . . . V dss RDS on Id 800 V 800 V 800 V < 1 .2 il 8.2 A 5. 1 A 8.2 A < 1 .2 il < 1 .2 Q TYPICAL RDS(on) = 0.98 £2

C1359

Abstract: MJH16018 K2603 C26CH 340E-01 147J tg-500 175C MUR30100E dl 0165
Contextual Info: MOTOROLA SC DIODES/OPTO O rder this data sheet by M UR301 ODE/D b3b?555 0001311= 2 5SE D MOTOROLA V -Z 3 -0 7 I SEMICONDUCTOR TECHNICAL DATA M UR30100E S w itc h m o d e P o w e r R e c tifie r TM . . . designed for use in switching power supplies, inverters and as freewheeling diodes,

f0pf

Abstract: KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode
Contextual Info: Characteristics and Use of Photodiodes INTRODUCTION Photodiodes are sem iconductor light sensors that generate a current or voltage when the P-N junction in the sem iconductor is illum inated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to

tda8841 s1

Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
Contextual Info: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'

5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Contextual Info: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

transistor c 3274

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH51 has an application specific s ta te -o f-a rt die designed for use In 50 Watts Halogen electronic transformers.

P2600BA70

Abstract: 380 volt 50 hz 50 amp triac TRIAC FT 1017 P0300EA70 triac 230v 50hz 5kw P3100EA70 P2300EA70 Siebe PP-2046 P3203AA P3100BA
Contextual Info: TECCOR ELECTRONICS, INC. A SIEBE COMPANY TO-92 1801 H U R D D R IV E IR V IN G , T E X A S 7 5 0 3 8 -4 3 8 5 P H O N E 2 1 4 /5 8 0 -1 5 1 5 FAX 2 1 4 /5 5 0 -1 3 0 9 MT1 MT2 DO -214AA M odified TO-220 SIDACtor 27 - 540 volts G en e ral In fo rm a tio n

H16S

Abstract: je210
Contextual Info: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS