RHRP8100 Search Results

RHR8100C

Abstract: RHRP8100CC
Contextual Info: RHRP8100CC Data Sheet Title HR 100 bt A, 00V pert al ode) utho rpoon, minctor, ache erg ted, itch wer pes, wer File Number 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns). It has half the recovery

RHR8100C

Abstract: RHRP8100CC
Contextual Info: RHRP8100CC Data Sheet January 2002 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHR8100C

Abstract: RHRP8100CC IGBT 1000V .200A
Contextual Info: RHRP8100CC Data Sheet January 2000 File Number 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHRP870

Abstract: RHRP8100 RHRP880 RHRP890
Contextual Info: RHRP870, RHRP880, RHRP890, RHRP8100 S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<60ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

RHRP8100

Contextual Info: RHRP8100 Data Sheet January 2002 8A, 1000V Hyperfast Diode Features The RHRP8100 is a hyperfast diode with soft recovery characteristic trr < 60ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RHRP870, RHRP880, RHRP890, RHRP8100 Semiconductor April 1995 File Number 8A, 700V - 1000V Hyperfast Diodes Features RHRP870, RHRP880, RHRP890 and RHRP8100 TA49060 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes

RHRP8100

Contextual Info: RHRP8100 Data Sheet January 2000 File Number 3667.2 8A, 1000V Hyperfast Diode Features The RHRP8100 is a hyperfast diode with soft recovery characteristic trr < 60ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

Contextual Info: RHRP870CC, RHRP880CC, RHRP890CC, RHRP8100CC H/ A SR R IS em iconductor April 1995 File Number 8A, 700V - 1000V Hyperfast Dual Diodes Features RHRP870CC, RHRP880CC, RHRP890CC and RHRP81OOCC TA49060 are hyperfast dual diodes with soft recovery characteristics (tRR < 55ns). They have half the

Contextual Info: RHRP8100 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8 V(RRM)(V) Rep.Pk.Rev. Voltage1000 t(rr) Max.(s) Rev.Rec. Time65n @I(F) (A) (Test Condition)8 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage3.0 @I(FM) (A) (Test Condition)8.0

TA49060

Abstract: IL100 RHRP8100 U4020
Contextual Info: i n t e RH R P8100 r r i i Data Sheet J a n u a ry . File Num ber w in 3667.2 8A, 1000V Hyperfast Diode Features The RHRP8100 is a hyperfast diode with soft recovery characteristic trr < 60ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHRP880CC

Abstract: RHR8100C RHRP8100CC RHRP870CC RHRP890CC
Contextual Info: RHRP870CC, RHRP880CC, RHRP890CC, RHRP8100CC S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Dual Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

Contextual Info: H A n B I< 8 RHRP870CC, RHRP880CC, RHRP890CC, RHRP8100CC 8A, 700V - 1000V Hyperfast Dual Diodes April 1995 Features Package JEDEC TO-22QAB • Hyperfast with Soft R • Operating Tem p eratu re. +175°C

IGBT 1000V .200A

Abstract: RHR8100C RHRP8100CC
Contextual Info: interrii RHRP8100CC m i J a n u a ry . D ata S h eet File N u m b er 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

Contextual Info: RHRP8100CC Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time55n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage3.0 @I(FM) (A) (Test Condition)8.0

Contextual Info: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

RHRG3040

Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Contextual Info: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090

100ns

Abstract: RHRP15120 hru150 rhrp30120
Contextual Info: HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE TO-252 TO-251 TO-220AC 'F AVG 'F(A V G ) 6A 4A SA 8A 15A 30A 30A 50A 'F (A V G ) 75A 50A 75A 100 A 150A RHRD440 RHRD640 2.1V 35ns 2.1V 35ns RHRD440S 2.1V 35ns RHRD640S RHRP840 2.1V 35ns 2.1V 35ns RHRP1540

RURU8060

Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
Contextual Info: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: — MCT/IGBT/DI0DESÎ8 HYPERFAST DUAL DIODES PAGE SELECTION G U ID E . 8-2 HYPERFAST DUAL DIODE DATA SHEETS

SINGLE LEAD TO-218

Abstract: RHRU100120 RHRP860C Rectifier 1A 1200V RURD420 RURD420S RHRP8120 RURD460S RURD620 RURD660
Contextual Info: INTERSIL ULTRAFAST RECOVERY RECTIFIER PRODUCTS TO-252 TO-251 NOTE: TO-252 is designated by “S” suffix. TO-220AC IF AVG VRRM 4A RURD420, RURD420S, 1.0V 35ns 6A 8A 1-888-INTERSIL or 321-724-7143 400V 600V RURD460, RURD460S, 1.5V 60ns 8A RURD620, RURD620S,

MUR840

Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Contextual Info: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market