ATF44101 Search Results

AT-8140

Contextual Info: ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET What HEWLETT münÆPACKARD Features • • • • 100 mil Flange High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency:

AT-8140

Abstract: AVANTEK transistor
Contextual Info: AVANTEK GOObSfli =1 • INC 0A Y A N T E K ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET ■ Tv2>l-'2-5 Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz

ATF-44101

Abstract: transistor marking P1 ghz
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

Contextual Info: T h p t HEWLETT &"UM PA C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data A TF-44101 Featu res • High Output Power: 32.0 dBm Typical Pi ^ at 4 GHz • High Gain a t 1 dB Compression: 8.5 dB Typical Gj ^ at 4 GHz • High Power Efficiency:

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

TF441

Contextual Info: What HEW LETT mLfiM P A C K A R D 2 - 8 GHz Medium Pow er Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBmTypicalPldBa t4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical GldB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz

ATF-44101

Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0␣ dBm Typical P 1 dB at 4␣ ␣ GHz • High Gain at 1 dB Compression: 8.5␣ dB Typical G 1 dB at 4␣ GHz • High Power Efficiency: 35% Typical at 4␣ GHz

ATF-44101

Abstract: mesfet ATF-45101 ATF-45171 ATF-46101 ATF-46171 ATF44101
Contextual Info: Medium Power MESFETs Typical Specifications @ 25°C Case Temperature Part Number Gate Width Optimum Frequency Test Frequency (mm) Range (GHz) (GHz) Vdd P1 dB G1 dB (V) (dBm) (dBm) ATF-44101 5000 2-8 4 9.0 +32.0 8.5 ATF-45101 2500 2-8 4 9.0 ATF-45171 2500

ATF SOT

Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Contextual Info: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101