ATF26836 Search Results

Contextual Info: ATF26836 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)90m P(D) Max. (W)275m Maximum Operating Temp (øC)175 I(DSS) Min. (A)30m I(DSS) Max. (A)90m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.15m

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

ATF-26836

Abstract: ATF-26836-STR ATF-26836-TR1 gaas fet micro-X Package
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features Description • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

AVANTEK YIG tuned oscillator

Abstract: avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator avantek vto yig oscillator avantek yto oscillator
Contextual Info: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

Contextual Info: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
Contextual Info: .AVANTEK I N C SDE D 0AV ANTE K 114nbh Q00b503 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features • • • • • Avantek 36 micro-X Package1 High fMAx: 60 GHz typical High Output Power: 18.0 dBm typical Pi dB at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

ATF SOT

Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

AVANTEK transistor

Contextual Info: .AVANTEK EGE INC D 0AYANTEK U 4 1 U h 0 D Q t iS f l 3 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features Avantek 36 micro-X Package1 • High fMAx: 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz

yig oscillator application note

Abstract: Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters
Contextual Info: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to

Contextual Info: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

Dielectric Resonator Oscillator DRO

Abstract: yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836
Contextual Info: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Note that since the transistor s parameters change with frequency, k also varies with frequency.

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101