ATF255 Search Results

Contextual Info: ATF25570 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)150m P(D) Max. (W)450m Maximum Operating Temp (øC)175 I(DSS) Min. (A)50m I(DSS) Max. (A)150m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.50m

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic

Contextual Info: Thal H E W L E T T mLEMP A C K A R D 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 F eatures • High Output Power: 20.5 dBm Typical dB at 4 GHz • Low N oise Figure: 1.0 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0 dB Typical at 4 GHz • Hermetic Gold-Ceramic

AT12570-5

Abstract: AVANTEK s atf255 AVANTEK oscillator
Contextual Info: EGE D AVANTEK INC ^A V A N TE K im n tb GG0bS7Q T ATF-25570 AT-12570-5 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 70 mil Package Features • High Output Power: 20.5 dBm typical Pi dB at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

ATF-25570

Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

hp 502 transistor

Contextual Info: Whpl HEW LETT WÜEM PACKARD 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features ity package. This device is designed for use in general • High Output Power: 20.5 dBm Typical P, dB at 4 GHz purpose amplifier and oscillator applications in the 0.5-10 GHz

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101