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Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic

Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0 dB Typical at 4 GHz • Hermetic Gold-Ceramic

hp 502 transistor

Contextual Info: Whpl HEW LETT WÜEM PACKARD 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features ity package. This device is designed for use in general • High Output Power: 20.5 dBm Typical P, dB at 4 GHz purpose amplifier and oscillator applications in the 0.5-10 GHz