ATC700B Search Results

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

balun 50 ohm

Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
Contextual Info: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

"27 mhz" amp

Abstract: arf15beo 700B ARF1500 ARF1501
Contextual Info: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

L-Band 1200-1400 MHz

Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

Contextual Info: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

C4532X5R1H475MT

Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
Contextual Info: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

Contextual Info: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
Contextual Info: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

723 voltage regulator

Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

723 voltage regulator

Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

mrf6v13250h

Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at

j-12000

Abstract: j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage

MC1723

Contextual Info: VRF157FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion.

Vishay rnc90

Abstract: disadvantages of astable multivibrator RTD signal conditioning theory thin film rtds circuit diagram temperature measurement rtd constant current source rtd circuits op amp oscillator 2pt100 IEC-60751 AN895
Contextual Info: AN895 Oscillator Circuits For RTD Temperature Sensors Author: RTDs serve as the standard for precision temperature measurements because of their excellent repeatability and stability characteristics. A RTD can be characterized over it’s temperature measurement range to

ARF1501

Abstract: "27 mhz" amp 700B ARF1500 RF BeO
Contextual Info: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-

Contextual Info: Document Number: MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage

Contextual Info: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

Contextual Info: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

T491B476K016AT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications