MRF6S18140HSR3 Search Results

MRF6S18140HSR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRF6S18140HSR3		Freescale Semiconductor	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	414.91KB	12

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NXP Semiconductors MRF6S18140HSR3 RF MOSFET LDMOS 28V NI880S
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MRF6S18140HSR3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-	Original	MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3	PDF
465B Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi	PDF
j1303 Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805	Original	MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j1303 CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 j2479	PDF
Chemi-Con DATE CODES Abstract: J6-33 AN1955 JESD22-A114 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-	Original	MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3 Chemi-Con DATE CODES J6-33 AN1955 JESD22-A114 MRF6S18140HSR3 Nippon capacitors	PDF
j633 Abstract: Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 w1760 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805	Original	MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j633 Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 w1760	PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original		PDF