APT50M60 Search Results

ed 77A DIODE

Abstract: 77A DIODE APT50M60L2VR DIODE ED 92
Contextual Info: APT50M60L2VR 500V 77A 0.060W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M60JVFR 0.060Ω 500V 63A POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

AN 780a

Abstract: APT45M60BFN APT50M60BFN y381 MC 78 M 05 CG 45M60
Contextual Info: ADVANCED POWER TECHNOLOGY W1 MTE ' D ^ • DESTTCH 4bb ■ AVP : A dvanced W jM ROWER T -3 A -IS 'co ^ ta 000D5Bb ZéÊk T e c h n o l o g y _ APT50M60BFN 500V 78.0A 0.060 W APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT50M60JN 500V 71A 0.060Q yiiX"UL Recognized" File No. E145592 S clHïlBHïïJïP ISOTOP* POWER MOS IV( AGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage

APT50M60JVFR

Contextual Info: APT50M60JVFR 500V 63A POWER MOS V FREDFET 0.060Ω S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M60L2VR 0.060Ω 500V 77A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M60L2VFR 500V 77A 0.060W POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M60L2VR

Abstract: 77A DIODE
Contextual Info: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: ADVANCED POWER L 3E D TECHNOLOGY • 0257^ QQOimQ b2s M A VP A d v a n ced P o w er Te c h n o l o g y APT50M60JNF 500V 71A 0.060Í2 ISOTOP' S tt" U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

LS 14500

Contextual Info: A d van ced P o w er Te c h n o l o g y " APT50M60JNF 500V 71A 0.060Í2 ISOTOP1 ,S M "U L Recognized" File No. E145592 S POWER MOS IVe SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

diode ED 68

Abstract: APT50M60
Contextual Info: AD VA NC ED PO WER T E C H N O L O G Y MIE D • G E 5 7 1 D EI GÜÜÜSflb Mbb * A V P A dvanc ed POWER T-3°l-l5 Te c h n o lo g y . APT50M60BFN 500V 78.0A 0.060 9 APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M03FETS

Contextual Info: APT50M60JVR 500V 63A 0.060W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

apt50m60jn

Abstract: N mos 100v 100A
Contextual Info: S S D D G G 27 2 T- SO APT50M60JN 500V 71A 0.06OΩ S "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

apt50m60jvr

Abstract: APT60DF60 APT50M
Contextual Info: APT50M60JVR 500V 63A POWER MOS V MOSFET S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

diode sg 71A

Abstract: 50M60JN SM 71A diode
Contextual Info: o D O S A d va n ced P o w er Te c h n o l o g y 8 APT50M60JN 500V 71A 0.060Q 9 Û "U L Recognized" File No. E145592 S) ISOTOP POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D *DM’ ’lM

Contextual Info: ADVANCED PO W ER Tec h n o lo g y* OD APT50M60JN ôs 500V 71A 0.060Q "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT 50M60JN

APT60DF60

Abstract: 77A DIODE APT50M60L2VFR diode 77a
Contextual Info: APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

sot-227 footprint

Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Contextual Info: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

APT802R4KN

Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED

apt20m25jnr

Abstract: apt20m25
Contextual Info: W UAAdvanced PT rn ow er tiu n t nirr Table of Contents • • • • • • • • ISOTOP® Products Product Selector Guide Features/Benefits Product Datasheets US and Canadian Representative Sales Offices US and Canadian Distributor Sales Offices International Representative and Distributor Sales Offices