APT5024AVR Search Results
APT5024AVR Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT5024AVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 54.5KB | 4 | ||
| APT5024AVR | Advanced Power Technology | POWER MOS V 500V 18.5A 0.240 Ohm | Original | 62.33KB | 4 |
APT5024AVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MJ1210Contextual Info: APT5024AVR • R A dvanced W .\A pow er Te c h n o lo g y " soov i8 .s a 0.240q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
apt5024avril-std-750mj1210 | |
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Contextual Info: APT5024AVR 500V 18.5A 0.240W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt5024avro-204ae | |
APT5024AVRContextual Info: APT5024AVR 500V 18.5A 0.240Ω POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt5024avro-204ae | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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Original |
mil-prf-19500iso90015017bvr40814+8 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT5012Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature |
Original |
apt5019hvrapt5026hvrapt4014hvrapt4018hvr+6 |