APT4015AVR Search Results
APT4015AVR Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT4015AVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 55.84KB | 4 | ||
| APT4015AVR | Advanced Power Technology | POWER MOS V 400V 25.5A 0.150 Ohm | Original | 65.78KB | 4 |
APT4015AVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: APT4015AVR 400V 25.5A 0.150W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt4015avro-204ae | |
APT4015AVRContextual Info: APT4015AVR 400V 25.5A 0.150Ω POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt4015avro-204ae | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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Original |
mil-prf-19500iso90015017bvr40814+8 | |
C2073Contextual Info: A d van ced W /Æ PO W ER Te c h n o l o g y • R A P T4015AVR 400v 25.5A 0.1 son POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
t4015avrapt4015avr00a/psil-std-750+1 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT5012Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature |
Original |
apt5019hvrapt5026hvrapt4014hvrapt4018hvr+6 |