AOT 430 Search Results

2N2222

Abstract: npn 2222 transistor n22222 2222a n2222 npn 2222 2n22222 br 2222 npn N 2222 n2222a
Contextual Info: 2 N 2221 • 2 N 2221 A • 2 N 2222 • 2 N 2222 A 'W Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Planar Switching Transistors A nw endungen: HF-Verstärker und Schalter A p p lic a tio n s : RF am plifiers and switches Besondere M erkm ale:

CA3420T

Abstract: CA3420AE voltmeter ic 741 CA3420 application Harris ota
Contextual Info: HARRIS SEfllCOND SECTOR blE ]> • 4305271 004b371 447 « H A S HARRIS S E M I C O N D U C T O R C A ? 4 2 fi W / H V Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers March1993 Features Description • 2V Supply at 300iiA Supply Currant

photointerrupter

Abstract: aot 430
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A 2.54 '2.03 r- cNj LO CO 1.70 1.45 GE006391 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche Merkmale Features

mosfet v0

Abstract: CA5260 CA5260T
Contextual Info: blE D HARRIS SEMICOND SECTOR m • 4302271 0Q4fc>427 510 B H A S CA5260 HARRIS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage provides • Very High 3 » 1.5TO 1 5 x 10120 Typ.

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode SFH 244 S Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im

toshiba tlc 711

Abstract: aot 110 opto CD 4017 PIN DIAGRAM 4011 BP TOSHIBA opto 2561 litton cpu primer p19 TC351 ic cd 4017 PIN DIAGRAM ic cd 4017
Contextual Info: TOSHIBA INTEGRATED CIRCUIT CMOS D ie ;T A « TC 3 5 1 8 0 F T E C H N IC A L D A T A TC35190F • = ¡VTEC3ATED C : S C. SILICON MONOLITHIC Video-data Coepretslon and E»panslon C o n tro lle r* ) 1988-1 1*03 DESCRIPTION TC35190F ( VCEC ) p e rfo ri* ercoJ.RC m i decodins

AF 109 R

Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Contextual Info: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB

CA3100E

Abstract: CA3100 2120D D04B
Contextual Info: HARRIS SEMICOND SECTOR b l E ]> WÊ M3DE271 GGMbSTQ h5T I H HAS CA3100 33 HARRIS SEMICONDUCTOR J ru Ë \J \J Wideband Operational Amplifier March 1993 Description • High Open Loop Gain at Video Typ. at 1MHz

Contextual Info: SDttfHS , HIN200 th ru HIN213 +5V Powered RS-232 Transm itters/R eceivers w ith 0.1 M icrofarad External C apacitors April 1996 Features Description • Meets All RS-232E and V.28 Specifications The HIN200-HIN213 family of RS-232 transmitters/receivers

bosch Knock sensor

Abstract: cc196 CC195 bosch Knock cc196 CC195 Knock Sensor IC bosch piezoelectric sensor bosch cc195 bosch Knock sensor CC196 bosch window motor knock sensor Bosch
Contextual Info: 20-PPR-1999 CC195 16:33 FROM BOSCH SAT SALES TO 901132799527 P. 02 Specification English extract CC195 Knock Sensor IC Specification Version 6.9a This specification is the property of Bosch and must be maintained in confidence and not discfoeed to others without the prior written consent of Bosch. Bosch makes no warranties

D2 DIN 6784

Abstract: D3 DIN 6784
Contextual Info: Infineon ?si li noiosi «* G a A s M M IC Data Sheet C G Y180 • Poweramplifierfor DECT, PHS, WLL applications • Fully integrated 3 stage amplifier • Operating voltage range: 2.7 to 6 V • Overall power added efficiency 35% • Easy external matching

AOT-2015HPW-1751B

Abstract: k3217 LTC3217 LTC3217EUD MO-220 S/BIP/SCB345100/B/30/10/AOT-2015HPW-1751B
Contextual Info: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pumps DESCRIPTION FEATURES n n n n n n n n n n n n Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs Up to 600mA Total Output Current

CA5420

Abstract: CA5420A CA5420AE CA5420AM CA5420AT CA5420E CA5420M CA5420T
Contextual Info: HARRIS SEMICOND SECTOR blE D • fii h a r r i s 43DS271 DD4b432 bflfl « H A S CA5420 Jrm % J S E M I C O N D U C T O R M mm Low Supply Voltage, Low Input Current BiMOS Operational Amplifier Features Description • CA5420A, CA5420 at 5V Supply Voltage with Full

programming cellphones software

Abstract: LT1932 LTC3217 LTC3217EUD MO-220 k3217 aot 2015
Contextual Info: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pump DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: XC7372 72 Macrocell CMOS EPLD HXILINX Advance Product Information The Universal Interconnect Matrix connects the Function Blocks to each other and to all input pins, providing 100% connectivity between the Function Blocks. This allows logic functions to be mapped into the Function Blocks and

H209

Abstract: H214
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: 2 H a r r is C A 5 4 2 0 A C A 5 4 2 0 Low -S upply Voltage, L o w -In p u t C urrent BiMOS Operational Am plifiers A u g u s t 1991 Features • 5420A , C A 5420 G uaranteed to O perate From ± 1V to ± 10 V S upp lies • 2V S upp ly a t 30 0jiA S upp ly C urrent

Contextual Info: EL2090C .November 1993 Kev C C b lt E C Features • Complete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy at NTSC • 100 M Hz bandwidth • 0.1 dB flatness to 20 MHz • Sample-and-hold has 15 nA typical leakage and 1.5 pC charge

CA3066

Abstract: CA3088 Pmos transistor 1N814 CA5130M tektronix 2230 adb voltage regulator CD4007 cascode transistor array Harris CA3086
Contextual Info: HARRIS SEIIICON] SECTOR H A R R • 4302271 OOMbB^O BTT « H A S CA5130 IS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET input Stag« . Vary High Z ,.1.5TO 1.5 x 1012a )iyp .

CA3140S

Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
Contextual Info: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)

AX2022

Abstract: TACT2150 D6142
Contextual Info: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline

Contextual Info: EPCOS Aluminum electrolytic capacitors Snap-in capacitors Series/Type: Date: B43508 December 2010 ŒPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: EL2090C élantec HIGH PtRFORMANCE ANALOG INTEGRATED CWCUITS EL2090C 100 MHz DC-Restored Video Amplifier F e a tu r e s G e n e ra l D e s c rip tio n • Com plete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy a t