AOA11 Search Results

2332 eprom

Abstract: PIN-20 IC DIAGRAM 2332 rom 2732A eprom
Contextual Info: TMS2332 4096-WORD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1984 - REVISED NOVEMBER 1985 4 0 9 6 X 8 Organization N PACKAGE All Inputs and Outputs TTL Compatible TOP VIEW A 7 C 1 ^ 2 4 3 v Cc A6£ 2 23 3 A 8 A5 £ 3 22 > 9 Fully Static (No Clocks. No Refresh)

Contextual Info: SM 64C16, SM J64C16 4096 WORD BY 4-BIT STATIC RAMS MARCH 1 98 7 —REVISED NOVEMBER 1987 Common I/O JO PACKAGE TOP VIEW • Military Temperature Range . . . - 5 5 ° C to 125°C (M Suffix) • Fast Static Operation • Battery Back-Up Operation . . . 2-Volt Data

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

Contextual Info: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.

TC516540

Contextual Info: TO SHIBA THM72V1635ATG-4.-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAM IC RAM MODULE DESCRIPTION The THM72V1635ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5164405AFT DRAMs on a printed circuit board. This module is optimized for applications which

Nippon capacitors

Contextual Info: HB56SW872ESN Series, HB56SW864ESN Series 64 MB Unbuffered EDO DRAM DIMM 8-Mword X 72/64-bit, 4 k Refresh, 2-Bank Module 36/32 pcs of 4 M X 4 Components HITACHI ADE-203-761C (Z) Rev. 3.0 Nov. 1997 Description The HB56SW872ESN, HB56SW864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7374200BNS/SG is a 4M x 36 bits Dynamic RAM MODULE w hich is assembled 9 pieces of 4M x 4bit DRAMs in 24 26 pin SOJ package on the printed circuit board w ith decoupling capacitors. The GM M 7374200BNS/SG is optim ized for

RCA 2116

Contextual Info: NOW / GE/RCA Products PART OF THE ^NEW H A R R IS S E M IC O N D U C T O R h a r r i^ 1 18 A 1 - 2 t 7 - A 6 < o o A O - CMM5104/3, CMM 5104/3Z High-Reliability, Radiation-Hardened CMOS/SOS 4096-Word by 1-Bit LSI Static RAM T 2J A2 - 3

Contextual Info: X NEC Electronics Inc. pPD42116x = 420, 820, 920, 162, 182 16-Megablt Synchronous Dynamic CMOS RAM Advance Information Description The juPD42116x is a synchronous DRAM (SDRAM) using a single 3.3-volt power supply and with all input signals synchronized to an external clock. Commands are

Contextual Info: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727LF is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M

Contextual Info: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: SMJ416100 16777216-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS045C - NOVEMBER 1992 - REVISED JUNE 1995 Organization . . . 16777216 x 1 Bits Single 5-V Power Supply 10% Tolerance Performance Ranges: '416100-70 •416100-80 '416100-10 ACCESS TIME ACCESS

TMS2732A

Abstract: tms2732 10MILLISECOND eprom tms2732A TMS2732A-45
Contextual Info: TMS2732A 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY A U G U ST 1 9 8 3 —R EV ISED FEB R U A R Y 198 8 Organization . . . 4096 x 8 J PACKAGE TOP VIEW Single 5-V Power Supply • All Inputs/Outputs Fully TTL Compatible • Max Access/Min TM S2732A-17

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECH N ICA L DATA MCM62973A Product Preview 4K x 12 Bit Synchronous Static RAM with Output Registers The MCM62973A ¡8 a 49,152 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance

R7F7

Contextual Info: Preliminary H M 5216165 S e r ie s 524,2SS-word x 16-blt x 2-bank Syn ch ro n o u s D ynam ic R A M HITACHI All inpuls and outputs are referred to the rising e d g e o f th e c lo c k in p u t. T h e H M 5 2 1 6 1 6 5 is offered in 2 banks for improved performance.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-10168-4E MEMORY ill lilllllllllllllllllllllllllllllllll 1M X 1 6 BITS CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification

Contextual Info: DRAM MODULE KM M332V804AS/AZ-L KMM332V804AS/AZ-L Fast Page Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V804A

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

Contextual Info: Preliminary KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M bit x 32 Dynam ic RAM high density m em ory module. The

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The

Contextual Info: KM416U Q 1004CT(E)-L CMOS DRAM Low Power 1Mx 16Bit CMOS Dynamic RAM with EDO DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs with low operating & self refresh voltage. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+3.0W

TE92

Abstract: YTE73
Contextual Info: HYM71V8655HCT6 8Mx64, 8Mx16 based, PC100 D E S C R IP T IO N The Hynix HYM71V8655HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy