AN-366 FAIRCHILD Search Results

"Content Addressable Memory"

Contextual Info: CFS2010B CFS2010B CAM GENERAL DESCRIPTION: 8 X 4 CAM W /0 MASK CFS2010B is an 8-word by 4-bit content addressable memory CAM . This megafunction is functionally identical to the National (Fairchild) 100142 except that it has eight words instead of four and it has no

TTL 74126

Abstract: 74ls gate symbols 7450 ttl 74LS series logic gates 3 input or gate 74LS55 Fairchild logic/connection diagrams ttl 74LS126 74LS125 74LS367 74126 high speed
Contextual Info: FAIRCHILD DIGITAL TT L High Speed Schottky 54S/74S 3 ns/19 mW Logic/C onnection D iagram 2 High Speed 54H/74H 6 ns/22 mW Std. TTL 9N 54/74 10 ns/10 mW 54LS/74LS 5 ns/2 mW Item ~g c su c U3_ Low Power S chottky (C o n t'd ) 9000 Series 8 ns/10 mW SSI FUNCTIONS

48v to 24v buck

Abstract: 24v active clamp forward converter FDM3622 48v mosfet switch 48V to 24V Switching FDMS8660S FDMS8690 FDMC2523P FDMS2734 FDMS3572
Contextual Info: Power MOSFETs for DC/DC Applications Fairchild’s Offering These products have been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

TTL 74192

Abstract: 74193 counter ttl 74193 pin diagram of 74192 74192 counter 74193 state diagram 74193 state diagram up counter 74193 74192 74193 A
Contextual Info: TTL/MSI 9360/54192, 74192 9366/54193, 74193 UP/DOWN DECADE AND BINARY COUNTERS DESCRIPTIO N - The T T L /M S I 9360/5 4 1 9 2 , 74192 is a synchronous Up/Down BCD Decade Cbunter, and the T T L /M S I 9366/5 4 1 9 3 , 74193 is a synchronous Up/Down 4-Bit Binary Counter. Both counters have separate up/down clocks, parallel load facility, terminal

AN716

Contextual Info: Fairchild Controlling Low Probability “False Write” Data Corruption in Serial EEPROMs Application Note 1008 S S c K S E M IC O N D U C T O R TM time period, the write operation may be incomplete, I.e. garbage will have been written. If a Vcc glitch occurs in this time period, the

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

FDB029N06

Abstract: 60V dual N-Channel trench mosfet
Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

POWER MOSFET CIRCUIT

Abstract: FDP030N06
Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FAN6757— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver® Technology The FAN6757 is a next-generation Green Mode PWM controller with innovative mWSaver® technology, which dramatically reduces standby and no-load power

FQPF*7N65C APPLICATIONS

Contextual Info: FAN6757— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6757 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which

Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDI030N06

Abstract: a2801
Contextual Info: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

FDP030N06

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDB029N06

Abstract: a2801 diode lt 9815
Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FAN6756A— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6756A is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which

6756M

Abstract: schematic diagram smps supply FAN6756 FAN6756MLMY ntc 80 0643
Contextual Info: FAN6756— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6756 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which

Contextual Info: FCD620N60ZF N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description o SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance