AN-366 FAIRCHILD Search Results

"Content Addressable Memory"

Contextual Info: CFS2010B CFS2010B CAM GENERAL DESCRIPTION: 8 X 4 CAM W /0 MASK CFS2010B is an 8-word by 4-bit content addressable memory CAM . This megafunction is functionally identical to the National (Fairchild) 100142 except that it has eight words instead of four and it has no

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDB029N06

Abstract: 60V dual N-Channel trench mosfet
Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDI030N06

Abstract: a2801
Contextual Info: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FCD620N60ZF N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description o SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: 3539 2 56 x 8 STATIC RANDOM ACCESS MEMORY f t c G E N E R A L DESCRIPTION - T he 3539 is a 2048-bit Static Read/Write Random Access Memory. Organized as 2S6 8-bit words, the 3239 features a com m on I/O structure which aHows packaging in a standard 22-pin ceramic O jP -J'his device uses a single +5 v o lt power supply and is TTL-com patible on

fairchild 9407

Abstract: 9407A 9407 ScansUX1004
Contextual Info: 9407 DATA ACCESS REGISTER FAIRCHILD TTL MACROLOGIC D E S C R IP T IO N — The 9 4 0 7 D ata Access Register D A R is designed to perform the m em ory address functions fo r R A M resident stack applications. The D A R can im plem ent general registers w ith an adder netw ork in program mable digital systems. Th e 9 4 0 7 con­

F3861

Abstract: F3850 F3861C f8 microprocessor version KA 7905 F3851 F3870
Contextual Info: F3861 Peripheral Input/Output F A IR C H IL D A S chlum berger Com pany Microprocessor Product Connection Diagram Description 40 39 36 37^ 36 35 I/O 7^ 1 I/O £ 2 Vgg^ 3 Vdd^ EXTINT^ 5 PRIOUT^ 6 WRITE^ 7 The Fairchild F3861 Peripheral Input/Output PIO device

F3054/F3057

Contextual Info: F3054/F3057 Monolithic Serial Interface CMOS CODEC/FILTER FAIRCHILD A Schlumberger Company Advanced Signal Processing Division Description Connection Diagram Top View The F3054, F3057 family consists of /u-law and A-law monolithic PCM CODEC/FILTERS utilizing the A /D and

ADT1-1WT AWT1-1T

Abstract: AD9215 AD9235 AD9236 AD9245 CP-32
Contextual Info: 14-Bit, 80 MSPS, 3 V A/D Converter AD9245 FUNCTIONAL BLOCK DIAGRAM FEATURES Single 3 V supply operation 2.7 V to 3.6 V SNR = 72.7 dBc to Nyquist SFDR = 87.6 dBc to Nyquist Low power: 366 mW Differential input with 500 MHz bandwidth On-chip reference and sample-and-hold

FDMC2674

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366m: Features tm General Description UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate

FDMC2674

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366mΩ Features tm General Description UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate

Analysis of the Sallen-Key architecture

Abstract: AD9215 AD9235 AD9236 AD9245 CP-32 RU-28 d116-12 R3R12
Contextual Info: 12-Bit, 80 MSPS, 3 V A/D Converter AD9236 FUNCTIONAL BLOCK DIAGRAM FEATURES Single 3 V supply operation 2.7 V to 3.6 V SNR = 70.4 dBc to Nyquist SFDR = 87.8 dBc to Nyquist Low power: 366 mW Differential input with 500 MHz bandwidth On-chip reference and sample-and-hold

Contextual Info: 12-Bit, 80 MSPS, 3 V A/D Converter AD9236 FUNCTIONAL BLOCK DIAGRAM FEATURES Single 3 V supply operation 2.7 V to 3.6 V SNR = 70.4 dBc to Nyquist SFDR = 87.8 dBc to Nyquist Low power: 366 mW Differential input with 500 MHz bandwidth On-chip reference and sample-and-hold

93c46 eeprom programmer schematic

Abstract: GRM2165C1H332JA01D eeprom programmer schematic diagram
Contextual Info: IXYS MX844 12 BIT, MULTI-CHANNEL POWER & TEMP SENSOR FOR MONITOR & CONTROL SYSTEMS Features: General Description √ Programmable gain differential amplifier +/-10mV, +/-25mV, +/-50mV, +/-250mV ranges √ 4 channel differential input multiplexer (3 input channels plus ground)

Contextual Info: MX844 12 Bit, Multi-Channel Power & Temp Sensor For Monitor & Control Systems Features Description • Wide Input Supply Range: 4.5V to 40V • Programmable Gain Differential Amplifier ±10mV, ±25mV, ±50mV, ±250mV Ranges • 4 Channel Differential Input Multiplexer

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

9602D

Contextual Info: S E M IC O N D U C T O R tm 9602/DM9602 Dual Retriggerable, Resettable One Shots General Description Features These dual resettable, retriggerable one shots have tw o in­ puts per function; one w hich is active high, and one w hich is active low. This allows the d esigner to em ploy either