FDI030N06 Search Results

FDI030N06 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDI030N06		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A I2PAK	Original	PDF		8

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FLIP ELECTRONICS FDI030N06 N-CHANNEL POWERTRENCH MOSFET 60V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDI030N06	Tube			200	1 - 10 - 100 - 1000 $2.61 10000 $2.61	Buy Now
onsemi FDI030N06 MOSFET N-CH 60V 120A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDI030N06	Tube			1,000	1 - 10 - 100 - 1000 $2.47 10000 $2.47	Buy Now
Avnet Americas	FDI030N06	Tube			374	1 - 10 - 100 - 1000 $1.94 10000 $1.80	Buy Now
Verical ()	FDI030N06		4,000		135	1 - 10 - 100 - 1000 $2.50 10000 $2.35	Buy Now
	FDI030N06		893		135	1 - 10 - 100 - 1000 $2.50 10000 $2.35	Buy Now
Newark	FDI030N06	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FDI030N06		4,893		1	1 - 10 - 100 $2.23 1000 $2.00 10000 $1.88	Buy Now

Flip Electronics	FDI030N06		18,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FDI030N06
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FDI030N06		998		2	1 - 10 $2.04 100 $1.46 1000 $1.29 10000 $1.29	Buy Now
Quest Components ()	FDI030N06		798			1 $3.13 10 $3.13 100 $3.13 1000 $1.72 10000 $1.72	Buy Now
	FDI030N06		798			1 $4.20 10 $4.20 100 $1.96 1000 $1.82 10000 $1.82	Buy Now
Rochester Electronics	FDI030N06		70		1	1 - 10 - 100 $2.23 1000 $2.00 10000 $1.88	Buy Now

FDI030N06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDI030N06	PDF
FDI030N06 Abstract: a2801 Contextual Info: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDI030N06 FDI030N06 a2801	PDF
Contextual Info: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDI030N06	PDF
Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDI030N06 FDI030N06	PDF
Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet	Original	FDI030N06 FDI030N06	PDF
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