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FDI030N06 Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDI030N06		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A I2PAK	Original	PDF		8

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onsemi FDI030N06 Trans MOSFET N-CH Si 60V 193A 3-Pin(3+Tab) I2PAK Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	FDI030N06		515		135	1 - 10 - 100 - 1000 $2.50 10000 $2.35	Buy Now
Avnet Americas	FDI030N06	Tube			1,000	1 - 10 - 100 - 1000 $1.63 10000 $1.59	Buy Now
Rochester Electronics	FDI030N06		558		1	1 - 10 - 100 $2.23 1000 $2.00 10000 $1.88	Buy Now
Flip Electronics	FDI030N06		18,000			1 $1.34 10 $1.34 100 $1.34 1000 $1.34 10000 $1.34	Get Quote
Fairchild Semiconductor Corporation FDI030N06 Trans MOSFET N-CH Si 60V 193A 3-Pin(3+Tab) I2PAK Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FDI030N06		998		1	1 $3.19 10 $2.07 100 $1.50 1000 $1.37 10000 $1.37	Buy Now
Quest Components ()	FDI030N06		798			1 $3.13 10 $3.13 100 $3.13 1000 $1.72 10000 $1.72	Buy Now
	FDI030N06		798			1 $4.20 10 $4.20 100 $1.96 1000 $1.82 10000 $1.82	Buy Now
Rochester Electronics	FDI030N06		70		1	1 - 10 - 100 $2.23 1000 $2.00 10000 $1.88	Buy Now

FDI030N06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	fdi030n06	PDF
FDI030N06 Abstract: a2801 Contextual Info: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	fdi030n06 a2801	PDF
Contextual Info: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	fdi030n06	PDF
Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	fdi030n06	PDF
Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet	Original	fdi030n06	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF