AI101 Search Results

A3688A

Abstract: UMS A6250 ES-CHA6250-QFG A3667A 7663 a3688 A6250 AN0017 MO-220
Contextual Info: Advance Information: AI1019 QFN Packaged 6-9GHz High Power Amplifier NC NC VD1 GND VD2 NC GND VD3 GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 GND 3 22 GND RF IN 4 21 RFOUT GND 5 20 GND NC 6 19 NC NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 NC NC

BP 109 transistor

Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
Contextual Info: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

CHK040A-SOA

Abstract: CHK-04
Contextual Info: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

"15 GHz" power amplifier 41dBm

Abstract: AN0017 MO-220
Contextual Info: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

BCR10

Abstract: M69KM096AA
Contextual Info: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus

Contextual Info: LRI2K 2048 bit EEPROM TAG IC at 13.56 MHz with 64-bit UID and KILL code, ISO15693 and ISO18000-3 Mode 1 compliant Preliminary Data Features • ISO15693 standard fully compliant ■ ISO18000-3 mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

CR10

Abstract: M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program

a6583

Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

Contextual Info: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

t3383

Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers

bcr10

Contextual Info: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus

CR10

Abstract: J-STD-020B M58WR128FB VFBGA56
Contextual Info: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

bo67

Abstract: A42 B331 equivalent A42 B331 TIC 160D plc structured text arrays EQUIVALENT TIC 160D rs232 equivalence "bcd ics" 1100 GE RS1Q
Contextual Info: ISaGRAF Version 3.5 USER'S GUIDE ICS Triplex ISaGRAF Inc. Information in this document is subject to change without notice and does not represent a commitment on the part of ICS Triplex ISaGRAF Inc. The software, which includes information contained in any databases, described in this document

M58WR064K

Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers

M58WR032QB

Abstract: CR10 M58WR016QB M58WR016QT M58WR032QT VFBGA56 8812h
Contextual Info: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
Contextual Info: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)

F8000-FFFFF

Contextual Info: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers

LA 7673 diagrams

Abstract: National PC87591 schematic circuit for bios programer thermistor ttc 103 TTC 103 thermistor PC87591S IO CHIP TTC 474 thermistor FB121 ROHM capacitor TTC 103 ntc thermistor
Contextual Info: March 2002 Revision 1.06 PC87591E, PC87591S and PC87591L LPC Mobile Embedded Controllers General Description The PC87591x interfaces with the host via an LPC interface that provides the host with access to the Keyboard and embedded controller interface channels, integrated functions,

schematic circuit for bios programer

Abstract: LA 7673 diagrams QVC12 TTC 103 ntc thermistor TIS153 thermistor ttc 101 TTC 103 thermistor thermistor ttc 103 NTC TTC 103 thermistor PA 0016
Contextual Info: May 2001 Rev. 1.03 PC87591E and PC87591S LPC Mobile Embedded Controller General Description Like members of National’s SuperI/O family, the PC87591x is PC01 and ACPI compliant. The National Semiconductor PC87591E and PC87591S are highly integrated, embedded controllers with an embedded-RISC core and integrated, advanced functions. Targeted for a wide range of portable applications that use the Low

ISO15963

Abstract: CRC16 ISO15693 1 out of 4 inventory request block diagram of VCD block diagram of VCD and its functions ISO15693 ISO18000-3 ISO10373-7
Contextual Info: LRI2K Memory TAG IC, 64 bit UID, 2048 bit EEPROM with KILL Code 13.56MHz, ISO15693 and ISO18000-3 Mode 1 compliant PRELIMINARY DATA Features summary • ISO15693 Standard Fully Compliant ■ ISO18000-3 Mode 1 Standard Fully Compliant ■ 13.56MHz ±7kHz Carrier Frequency