M58WR064KU Search Results
M58WR064KU Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| M58WR064KU | Numonyx | 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories | Original | 2.28MB | 123 | ||
| M58WR064KU70ZA6E | Numonyx | Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 88VFBGA | Original | 123 | |||
| M58WR064KU70ZA6F TR | Micron Technology | Integrated Circuits (ICs) - Memory - IC FLASH 64M PARALLEL 88VFBGA | Original | 2.04MB | |||
| M58WR064KU70ZA6FTR | Numonyx | Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 88VFBGA | Original | 123 |
M58WR064KU Price and Stock
Micron Technology Inc M58WR064KU70ZA6UFlash, 4MX16, 70ns, PBGA44 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M58WR064KU70ZA6U | 6,893 |
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Get Quote | |||||||
Micron Technology Inc M58WR064KU70D16 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M58WR064KU70D16 | 6,706 |
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Get Quote | |||||||
Micron Technology Inc M58WR064KU60ZA6EFlash, 4MX16, 60ns, PBGA44 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M58WR064KU60ZA6E | 6,324 |
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Get Quote | |||||||
Micron Technology Inc M58WR064KU60ZA6UFlash, 4MX16, 60ns, PBGA44 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
M58WR064KU60ZA6U | 6,323 |
|
Get Quote | |||||||
Micron Technology Inc M58WR064KU70ZA6EFlash, 4MX16, 70ns, PBGA44 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
M58WR064KU70ZA6E | 5,247 |
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Get Quote | |||||||
M58WR064KU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers |
Original |
m58wr016kum58wr016klm58wr032kum58wr032kl+4 | |
M58WR064KContextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers |
Original |
m58wr016kum58wr016klm58wr032kum58wr032kl+4 | |
CR14
Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
|
Original |
m58wr016kum58wr016klm58wr032kum58wr032kl+6 | |
M58WR064KContextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers |
Original |
m58wr016kum58wr016klm58wr032kum58wr032kl+5 | |
|
Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers |
Original |
m58wr016kum58wr016klm58wr032kum58wr032kl+3 | |
M58WR064KU
Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL
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Original |
m58wr016kum58wr016klm58wr032kum58wr032kl+6 | |
PF38F4060M0Y3DF
Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
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Original |
1024mbpf58f0062m0y1bf105ballpf58f0033m0y0bf+14 |