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M58WR016KL Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
M58WR016KL		Numonyx	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories	Original	PDF	2.28MB	123
M58WR016KL		STMicroelectronics	16- or 32-Mbit (x16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories	Original	PDF	60.76KB	10

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Micron Technology Inc


Micron Technology Inc M58WR016KL70ZA6E Flash, 1MX16, 70ns, PBGA44
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58WR016KL70ZA6E		6,458			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58WR016KL60ZA6U Flash, 1MX16, 60ns, PBGA44
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58WR016KL60ZA6U		4,890			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58WR016KL60ZA6E Flash, 1MX16, 60ns, PBGA44
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58WR016KL60ZA6E		4,839			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58WR016KL70ZA6U Flash, 1MX16, 70ns, PBGA44
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58WR016KL70ZA6U		2,998			1 - 10 - 100 - 1000 - 10000 -	Get Quote

M58WR016KL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VFBGA44 Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU ADQ12 Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit VFBGA44 M58WR016KL M58WR032KL ADQ12	PDF
Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F	PDF
M58WR064K Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K	PDF
CR14 Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328 Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit CR14 M58WR032KU VFBGA44 MS-328	PDF
ADQ14 Abstract: M58WR032KU M58WRxxxKU Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit M58WR016KL70ZA6E ADQ14 M58WRxxxKU	PDF
M58WR064K Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KU70ZA6U M58WR064K	PDF
Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit	PDF
M58WR064KU Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit 88C0 CR14 M58WR032KU VFBGA44 M58WR064KL	PDF