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    M58WR064HL Search Results

    M58WR064HL Datasheets (2)

    Numonyx
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M58WR064HL
    		Numonyx 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF 2.03MB 114
    M58WR064HL70ZB6E
    		Numonyx 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF 2.03MB 114
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    M58WR064HL Price and Stock

    Micron Technology Inc

    Micron Technology Inc M58WR064HL70ZB6E

    Flash, 4MX16, 70ns, PBGA44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58WR064HL70ZB6E 6,494
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    Micron Technology Inc M58WR064HL7AZA6U

    Flash, 4MX16, 70ns, PBGA80
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58WR064HL7AZA6U 6,414
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    Micron Technology Inc M58WR064HL7AZA6F

    Flash, 4MX16, 70ns, PBGA80
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58WR064HL7AZA6F 5,864
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    Micron Technology Inc M58WR064HL70ZB6U

    Flash, 4MX16, 70ns, PBGA44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58WR064HL70ZB6U 5,541
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    Micron Technology Inc M58WR064HL7AZA6E

    Flash, 4MX16, 70ns, PBGA80
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58WR064HL7AZA6E 3,555
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    M58WR064HL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CR10

    Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
    Contextual Info: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)


    Original     		M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44 PDF

    M58WR064HUL

    Abstract: 04MAY2006
    Contextual Info: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary „ Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)


    Original     		M58WR064HU M58WR064HL M58WR064HUL 04MAY2006 PDF

    m36w0r6050u

    Abstract: M36W0R M36W0R605 M58WR064HUL 221 ball MCP
    Contextual Info: M36W0R6050U0 M36W0R6050L0 64-Mbit mux I/O, multiple bank, burst flash memory 32-Mbit PSRAM, 1.8 V supply MCP Features • Multichip package – 1 die of 64 Mbit (4 Mb x16, mux I/O multiple bank, burst) flash memory – 1 die of 32 Mbit mux I/O, burst PSRAM


    Original     		M36W0R6050U0 M36W0R6050L0 64-Mbit 32-Mbit 88C0h 88C1h m36w0r6050u M36W0R M36W0R605 M58WR064HUL 221 ball MCP PDF