AC000 Search Results

Contextual Info: REV ECN NO. A NEW DESIGN SPECIFICATION ORDER INFORMATION * Current Rating: 1 A * Withstanding Voltage: AC0007 - 01 - XXX - T1 1000 VAC 1 min. Style 1000 Megohms min. No. of Contact * Contact Resistance: 20 Milliohms max. 007 008 009 * Operating Temperature:

Contextual Info: REV ECN NO. A SPECIFICATION APP. DATE NEW DESIGN ORDER INFORMATION AC0005 - * C urrent Rating: XX - XXX - T4 1 A * W ithstanding Voltage: 1000 VAC 1 m in. 2.5 4 *N 0 OF C0NTACTS/2+0.20 Plating: Series * Insulation Resistance: Tin (Lead Free) 1000 Megohms min.

Contextual Info: REV 4.5±0.20 ECN NO. APP. DATE NEW DESIGN SPECIFICATION ORDER INFORMATION * Current Rating: 1 A * Withstanding Voltage: AC0002 - XX - XXX - XX 600 VAC 1 min. Series Plating T1: Tin X1 ¡Selective Gold * Insulation Resistance: 1000 Megohms min. * Contact Resistance:

Contextual Info: A ±0.40 REV ECN NO. A NEW DESIGN APP. SPECIFICATION ORDER INFORMATION * Current Rating: AC0003 - XX - XXX - DATE T1 1 A * Withstanding Voltage: 600 VAC 1 min. No. of Series Contact * Insulation Resistance: Plating: Tin Style 1000 Megohms min. * Contact Resistance:

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

yg 2822

Abstract: RAS 0510 cs8221 neat Waukesha 6670 82C631 82c211 2021G 82C206 CHIPset for 80286 REG62
Contextual Info: PRELIM INARY C S 8221 NEW ENHANCED AT NEAT DATA BOOK 8 2 C 2 1 1 / 8 2 C 2 1 2 / 8 2 C 2 1 5 / 8 2 C 2 0 6 (IPC ) CHIPSet™ 100% IBM™ PC/AT Compatible New En­ hanced CHIPSet™ for 12MHz to 16MHz systems Supports 16MHz 80286 operation with only 0.5-0.7 wait states for 100ns DRAMs and 12

8088 memory interface SRAM

Abstract: AMD Memory Management unit F0000-FFFFF D0000-D3FFF D0000-DFFFF function of internal code memory microcontroller isa bus interfacing with microprocessor 8088 SC310 B8000 A0000-FFFFF
Contextual Info: ÉlanTMSC300 and ÉlanSC310 Microcontrollers Memory Management Application Note The ÉlanTMSC300 and ÉlanSC310 microcontrollers contain a sophisticated memory management unit MMU , which makes PC/AT compatibility easy to achieve. However, if you wish to stray from

Contextual Info: CS5321 High Dynamic Range Delta-Sigma Modulator Features Description • Delta-Sigm a Architecture - Fourth-Order Modulator - Variable Sample Rate - Internal Track-and-Hold Amplifier • Clock Jitter Tolerant Architecture • Dynamic Range - 121 dB @ 411 Hz Bandwidth

KNC 201 15

Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Contextual Info: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

Contextual Info: TDA7567PD 4 x 50 W differential quad power amplifier with built-in diagnostics features Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Differential Input ■ New high efficiency class SB ■ High output power capability 4x28 W/4  @

Contextual Info: TDA7564B 4 x 50W multifunction quad power amplifier with built-in diagnostics feature Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ New high efficiency class SB ■ High output power capability 4x28 W/4  @

PROCESSOR

Abstract: mp 9141 es dc-dc mp 9141 es CX5520 GXm-180B 2.9V 70C power module si 3101 schematic diagram Geode GXm Processor tag 8514 30054 gxm-266b
Contextual Info: Geode GXm Processor Integrated x86 Solution with MMX Support General Description The National Semiconductor Geode™ GXm processor is an advanced 32-bit x86 compatible processor offering high performance, fully accelerated 2D graphics, a 64-bit synchronous DRAM controller and a PCI bus controller,

KP2311E

Abstract: T60ms LQFP64 TDA7529 TDA7529TR af-hold af-sample am fm frontend
Contextual Info: TDA7529 RF front-end for AM/FM DSP car-radio with IF sampling Features • Fully integrated VCO for world tuning ■ High performance PLL for fast RDS system ■ I/Q mixer for FM IF 10.7MHz with image rejection and integrated LNA ■ I/Q mixer for AM IF 10.7MHz up conversion

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

FL128P

Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70