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MARCONI amplifier

Abstract: 84-1LMI NN12 P35-5112-000-200
Contextual Info: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.

IC ATA 2388

Abstract: ATA 2388 OB 2259 pin diagram of ic 3843 ci 4019 5345 P/OB 2259
Contextual Info: Supertex inc. _ HV517 Advance Information 21-Channel CMOS to High Voltage Translator Features General Description □ □ □ □ □ The HV517 is a high voltage level translator IC with 21channel CMOS inputs and 42 high voltage outputs. Each of its 21 outputs and 21 inverted outputs is capable

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

DC-10

Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 Preliminary Datasheet v2.2 DC–20 GHZ MMIC SPDT NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-Reflective design Low Insertion loss 2.2 dB at 20GHz typical Very high isolation 40 dB at 20GHz typical

20GHZ

Abstract: FMA3008 MIL-HDBK-263
Contextual Info: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the

FMA3011

Abstract: HEMT MMIC POWER AMPLIFIER MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm 2068 d 05332 214-3556
Contextual Info: FMA3011 FMA3011 12.7GHZ TO 16GHZ MMIC POWER AMPLIFIER Package Style: Bare Die Product Description Features The FMA3011 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from

FMS2027

Abstract: FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It

84-1LMI

Abstract: NN12 P35-5112-000-200
Contextual Info: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.

84-1 LMI

Abstract: 22-A114-B FMS2021
Contextual Info: FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical

30SPA0553

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

16G073-2L1

Abstract: ic 40 pin
Contextual Info: TEKTRONIX INC/ TRI ÛÜINT ÔTGbElfl 0ÜD Q5? b 4 B T R Ú 2bE D 'T '7 4 - ß - o G ig a B it L o g ic 16G073 & Limiting Amplifier 18 dB Gain /1 GHz Bandwidth FEATURES • High gain: 18 dB • Broad Bandwidth: 1 GHz min. cut-off frequency • Low input and output VSWR

KT 829 b

Abstract: FPD1 808 nm 1000 mw 2 pins KT 829
Contextual Info: T E K T R O N I X INC/ TRI ÛUI NT 2 bE » E3 B*ïDb23.a O O D D S b l 3 Q T R Û O M !L Î G ig a B it L o g ic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES 1High gain > 18 dB 1Broad Bandwith: DC to 700 MHz typ. >Low noise: 3 pA//Hz typ. for 16G071-30L1

Contextual Info: TEKTRONIX INC/ TRI ÛU IN T öSGbPlfl 0 0 0 G M 5 G M O T R Ö 2bE D T [ ïniüll G ig a B it L o g ic q S •\c i - O S ' 10G065 10G065K 7 Stage Ripple Counter/Divider 3.0 GHz Clock Rate 10G PicoLogic Family FEATURES >10G PicoLogic I/O compatible • Wlre-OR output capability

PG100A

Abstract: S0030 GaAs IC High Isolation Positive Control Switch 4GHZ GBL 16G020
Contextual Info: TEKTRONIX INC/ TRI Û U I N T 2bE D fl*iOt21ù O D G G S 1 S b " P G ig a B it L o g ic S M ITRÚ \ 16G020/S0030 Dual GaÂs SPST Switch 0.5 nS Switching Time FEATURES Ultra low DC power consumption 60p.W typical Low insertion loss (< 3dB) Two layer gold metalization

P1014

Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

15MPA0566

Abstract: 84-1LMI
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier 15MPA0566 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

8SDV0500

Abstract: 84-1LMI 221E-09
Contextual Info: 2.0-16.0 GHz GaAs MMIC Frequency Divider May 2005 - Rev 05-May-05 8SDV0500 Features Chip Device Layout tio n Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing

U1001

Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

P1000 diode

Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain

IC 566 vco

Abstract: 6OSC0460 84-1LMI
Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 6OSC0460 Features Chip Device Layout tio n On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing

PAD41

Contextual Info: HV577/HV579 Die Specifications Pad Coordinates in Microns 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 23 42 22 21 20 43 19 46 18 17 47 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40

Contextual Info: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

inductance R600

Contextual Info: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection

U1000

Abstract: XB1004 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing