AB100 Search Results

AB100-90

Contextual Info: Preliminary GaAs IC BGA-MCM High Isolation SPDT GSM Synthesizer Switch 0.7–1.1 GHz AB100-90 Features BGA-MCM • High Isolation 90 dB @ 900 MHz ‘A1’ CORNER 0.031 (0.80 mm) 4 ■ +5 V Control Voltages ■ 8 x 8 x 1.6 mm Ball Grid Array (BGA) Package, 0.8 mm Pitch

Contextual Info: GaAs IC BGA-MCM High Isolation SPDT GSM Synthesizer Switch 0.7-1.1 GHz ESAlpha AB100-90 BGA-MCM F eat ur e s • High Isolation 90 dB @ 900 MHz 0.031 (0.80 mm) ‘A T C O R N E R A ■ +5 V Control Voltages n ■ 8 x 8 x 1.6 mm Ball Grid Array (BGA) Package, 0.8 mm Pitch

Contextual Info: GaAs IC BGA-MCM High Isolation SPDT GSM Synthesizer Switch 0.7-1.1 GHz ES Alpha AB100-90 Features BGA-MCM • High Isolation 90 dB @ 900 MHz 0.031 'A T C O R N E R A ‘AV CORNER n (0 .8 0 m m ) - ■ +5 V Control Voltages ■ 8 x 8 x 1.6 mm Ball Grid Array (BGA)

interface zigbee with 8051

Abstract: 8051 interfacing with zigbee block diagram OF ZIGBEE module for power saving in home automation ZIGBEE INTERNAL DIAGRAM zigbee control zigbee based data COMMUNICATION SYSTEMS zigbee based remote control 8051 interfacing with zigbee pro rf PRO transceiver module zigbee
Contextual Info: A p p l i c at i o n B r i e f AB1001 CEL ZigBeeTM/802.15.4 Application Brief Data communication path in HVAC Systems utilizing wireless ZigBee Modules Introduction Building/Factory owners are faced with the physical introduction of new control and monitoring technology in both

Contextual Info: D S 1245Y/A B DALLAS SEMICONDUCTOR DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM NC ta 1 32 1 A16 I2 31 1 A14 A12 • Unlimited write cycles

PGA204

Abstract: 2N4117 2N4117A AB-100 INA110 INA111 INA114 OPA27
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 520 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (520) 889-1510 • Immediate Product Info: (800) 548-6132

NS250H

Abstract: NS160H NSX100H Schneider NSX 400 F NS100N NS100H MA NS250N NSX100 NS160N NSX100F
Contextual Info: Low Voltage Compact NSX100 to 630 Circuit breakers and switch-disconnectors Substitution guide - Technical characteristics 2010 Substitution guide Technical characteristics Performance levels and trip units 2 Compact NS100/160/250 Compact NSX100/160/250 Compact NS400/630

28256 eeprom

Abstract: EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY
Contextual Info: DAI I AS DS1235Y/AB s e m ic o n d u c t o r 256K Nonvolatile SRAM PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss A u l 1 2 8 1 VC C A12l 2 2 7 l WB A7l 3 26 1 A13 I 4 25 1 A8 A5 ! 5

2816 eeprom

Abstract: eeprom 2816 1220AD AB-100 DS1220 DS1220AB DS1220AD 1220AB 2716 eeprom A6022-3
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM !• DALLAS nr m m im m m m m t com PIN A S S IG N M E N T FEATU R ES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power

80x51

Abstract: three phase sine wave generator simple filter turns square waves into sine waves ISO102 AB-083 AB-161 switched integrator AB022 Voltage to Current Converter dual 4-20mA circuit precision 4-20ma current source
Contextual Info: Burr-Brown Corporation Application Bulletin Index AB-001 Increasing INA117 Differential Input Range AB-002 Make a Precision Current Source or Current Sink AB-003 Voltage-Reference Filters AB-004 Make a Precision -10V Reference AB-005 Make a Precision ±10V Reference

Contextual Info: DS1645Y/AB, DS1645YLPM/ABLPM DALLAS SEMICONDUCTOR DS1645Y/AB, DS1645YLPM/ABLPM Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC k • Data is automatically protected during power loss A16 • Directly replaces 128K x 8 volatile static RAM or EEPROM

Contextual Info: DS1245Y/AB DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM NC I1 A16

Contextual Info: DS1730Y/AB PRELIM IN AR Y DALLAS SEMICONDUCTOR DS1730Y/AB Dual Voltage Partitioned 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc Vcc • Data is automatically protected during power loss wl • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

Contextual Info: DS1650Y/AB DALLAS DS1650Y/AB Partitioned 4096K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc A18 I| 1 • Data is automatically protected during power loss A16 I 1 2 • Directly replaces 512K x 8 volatile static RAM or EEPROM

Contextual Info: ROSE+BOPLA ENCLOSURES A PHOENIX MECANO COMPANY Alubos Product Drawings Last Updated 6/3/2008 For Secondary Services, Product Support, or To Order, Call 1-301-696-9800 Dimensional Drawings Rose+Bopla Enclosures 7330 Executive Way Frederick, MD 21704 301-696-9800

28256 eeprom

Abstract: DS1235Y
Contextual Info: 0S1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc A141 1 A121 2 A71 3 A61 4 AS 1 5 A41 6 A31 7 A21 8 A11 9 AO1 10 DQO1 11 OQ1 1 12 DQ2 1 13 GND1 14 • Data is automatically protected during power

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

22CV10AP

Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
Contextual Info: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide

Contextual Info: DS1658Y/AB PRODUCT PREVIEW DALLAS SEMICONDUCTOR D S 1 6 5 8 Y /A B Partitionable 128Kx 16 NV SRAM FEATURES PIN ASSIGNM ENT • 2,097,152 bit static RAM organized as 131,072 words by 16 bits CEU • 10 year minimum data retention in the absence of power 1 40 □

Contextual Info: DS1645Y/AB DALLAS SEMICONDUCTOR DS1645Y/AB Partitioned 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss NC I| 1 A16 I 1 2 3 4 A14 I1 • Directly replaces 128K x 8 volatile static RAM or EEPROM

FTN256

Abstract: schematic diagram usb flash sandisk sandisk micro sd card pin configuration sandisk micro sd card circuit diagram 10K,DNI verilog code for delta sigma adc 8 bit dip switch FT232R USB UART SMD Transistor g16 CB20
Contextual Info:  MachXO Control Development Kit User’s Guide June 2010 Revision: EB46_01.4  Lattice Semiconductor MachXO Control Development Kit User’s Guide Introduction Thank you for choosing the Lattice Semiconductor MachXO Control Development Kit! This guide describes how to start using the MachXO Control Development Kit, an easy-to-use platform for rapidly

Contextual Info: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: DS1750Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1750Y/AB Dual Voltage Partitioned 4096K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of VCc • Data is automatically protected during power loss A1B I1 1 321 2 3 4 31 1 A16 I1 A14 I1