SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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8002 AUDIO amplifier
Abstract: 16x16 LED Matrix multi MVA generator real time application and product for fir b1132 AA0005 16x16 LED Matrix Non-Pipelined processor DSP56800 AA0003
Contextual Info: DSP56800 16-Bit Digital Signal Processor Family Manual DSP56800FM/D Rev. 1.00, 01/2000 MFAX and OnCE are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice.
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dsp5680016-bitdsp56800fm/d8002 audio amplifier+816x16 led matrix multimva generatorreal time application and product for firb1132aa000516x16 led matrixnon-pipelined processoraa0003
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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PROCESSOR
Abstract: mp 9141 es dc-dc mp 9141 es CX5520 GXm-180B 2.9V 70C power module si 3101 schematic diagram Geode GXm Processor tag 8514 30054 gxm-266b
Contextual Info: Geode GXm Processor Integrated x86 Solution with MMX Support General Description The National Semiconductor Geode™ GXm processor is an advanced 32-bit x86 compatible processor offering high performance, fully accelerated 2D graphics, a 64-bit synchronous DRAM controller and a PCI bus controller,
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32-bit64-bitprocessormp 9141 es dc-dc+8mp 9141 escx5520gxm-180b 2.9v 70cpower module si 3101 schematic diagramgeode gxm processortag 851430054gxm-266b
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Contextual Info: DSP56824 OVERVIEW 1 PIN DESCRIPTIONS 2 MEMORY AND OPERATING MODES 3 EXTERNAL MEMORY INTERFACE 4 PORT B GPIO FUNCTIONALITY 5 PORT C GPIO FUNCTIONALITY 6 SERIAL PERIPHERAL INTERFACE 7 SYNCHRONOUS SERIAL INTERFACE 8 TIMERS 9 ON-CHIP CLOCK SYNTHESIS 10 COP/RTI MODULE
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A81DC
Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF
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ane408/ddsp56000/1ane408ane008+11300-3400hza81dca21dca51dcsg 2368fe8800ed8000e78000fa64000110ffffe7040
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JESD97
Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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m29w128fhm29w128flwords/16tsop56+532-word64-bytesmemory protection devicesjesd97m29w128f
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FL128P
Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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samsung electronics ba41
Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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IS29GL256
Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns
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DSP56800
Contextual Info: SECTION 1 DSP56L811 OVERVIEW DSP56L811 User’s Manual 1-1 DSP56L811 Overview 1.1 1.2 1.3 1.4 1.5 1.6 1-2 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-3 MANUAL ORGANIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4
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PROCESS CONTROL TIMER BASED TOPICS
Abstract: AA0005 DSP56800 addressing modes of dsp processors pin diagram of alu for computer organization Parallel FIR Filter
Contextual Info: SECTION 1 INTRODUCTION DSP56800 Family Manual 1-1 Introduction 1.1 1.2 1.3 1.4 1-2 DSP56800 FAMILY ARCHITECTURE . . . . . . . . . . . . . . . . . 1-3 INTRODUCTION TO DIGITAL SIGNAL PROCESSING . . . . 1-8 SUMMARY OF FEATURES . . . . . . . . . . . . . . . . . . . . . . . . 1-12
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dsp5680016-bitprocess control timer based topicsaa0005+3addressing modes of dsp processorspin diagram of alu for computer organizationparallel fir filter
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DSP56001
Abstract: DSP56002 DSP56003 PB10 PB12 FAST MOTOROLA
Contextual Info: SECTION 7 SYNCHRONOUS SERIAL INTERFACE MOTOROLA 7-1 SECTION CONTENTS Paragraph Number Section Page Number 7.1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-3 7.2 GENERAL-PURPOSE I/O PORT C . . . . . . . . . . . . . . . . . . . . . . . . . 7-4
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PCF8474
Abstract: Phoenix BIOS manual f.54 a pc8574 ISA bus controller for 80286 stepping motor teac CB2E188 AIC-7880 J101 J102 J103
Contextual Info: Intel AP450GX MP Server Board Set Technical Product Specification Order Number 282964-003 September 1997 The AP450GX MP Server Board Set may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Characterized errata that may cause the
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MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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Y00308
Abstract: 8003 qualcomm 1110
Contextual Info: DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any
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S25FL129
Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
Contextual Info: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M,S29GL128M,S29GL064M,S29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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120R
Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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