AA 118 DIODE DATASHEET Search Results

PI74ST1G125TEX

Contextual Info: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V – 3.6V

Contextual Info: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V –3.6V

Contextual Info: PI74STX1G02 SOTiny Gate STX 2-Input NOR Description Features • • • • • High-speed: tPD = 5.0ns typical into 15pF @ 5V VDD Broad Operating Range: VDD = 1.65V – 5.5V Power down high-impedance inputs/outputs High output drive: ±24mA at 3V VDD

63 sot23 6pin

Abstract: PI74STX1GU04CEX
Contextual Info: PI74STX1GU04 SOTinyTM Gate STX Unbuffered Inverter Description Features • • • • • • – – – High-speed: tPD = 2.6ns typical into 50pF @ 5V VDD Unbuffered Output Broad operating range: VDD = 1.65V – 5.5V Power down high-impedance inputs/outputs

AF4415P

Abstract: 4415P 4415-P
Contextual Info: AF4415P P-Channel 20-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability These miniature surface mount MOSFETs utilize

si9934

Contextual Info: Si9934DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: PSoC 3: CY8C38 Family Datasheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C38 family offers a modern method of signal acquisition, signal

DIODE marking S4 06

Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Contextual Info: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the

2504P diode

Abstract: h9942 FDW2502P 2502P CBHK741B019 F63TNR FDW2504P
Contextual Info: FDW2504P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

DIODE marking S4 97

Contextual Info: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2506p

Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Contextual Info: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2502P

Abstract: 2502P CBHK741B019 F63TNR FDW2521C h994 2521c fairchild
Contextual Info: FDW2521C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: DATASHEET 19MHz Radiation Hardened 40V Quad Rail-to-rail Input-output, Low-power Operational Amplifiers ISL70444SEH Features The ISL70444SEH features four low-power amplifiers optimized to provide maximum dynamic range. These op amps feature a unique combination of rail-to-rail operation on

sx8733

Abstract: d1al active noise cancellation
Contextual Info: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 8 + ADC - SMBUS SMBCLK VDD

LM86

Abstract: MMBT3906 acs transistor
Contextual Info: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 8 + ADC - SMBUS SMBCLK VDD

Contextual Info: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK D2- SMBDAT VDD SX8743 1 3 8 + ADC - SMBUS SMBCLK VDD P3 2 3 P1 4 +- + ADC - SMBUS 7

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

LIA SOT23-3

Contextual Info: SX8733 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 + ADC - SMBUS 8 SMBCLK VDD 7 SMBDAT P1 SX8744

Contextual Info: SX8733 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 + ADC - SMBUS 8 SMBCLK VDD 7 SMBDAT P1 SX8744

Contextual Info: FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS on = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Contextual Info: SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT General Description Features Fairchild’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: SQM40N10-30 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: SQM120N10-09 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: SQM47N10-24L Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedc