SI9934 Search Results

Si9934DY

Contextual Info: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2

Si9934BDY

Contextual Info: SPICE Device Model Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

VDS16

Abstract: D-16 Si6943DQ Si9934DY 5121 M
Contextual Info: Tem ic SÌ9933DY S e m i c o n d u c t o r s Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V -20 r DS(on) (£2) I d (A) 0.11 @ VGs = -+-5 v ±3.4 0.15 @VGS =-3.0 V ±2.9 0.19 @ VGs = -2.7 V ±2.6 Recommended upgrade: Si9934DY Lower profile/smaller size— see LITE FOOT equivalent: Si6943DQ

Si9934DY

Abstract: Si6943DQ Si9933ADY
Contextual Info: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1

SI9934BDY

Contextual Info: Si9934BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2

Contextual Info: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 6.4 0.056 at VGS = - 2.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 6.4 0.056 at VGS = - 2.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si6943DQ

Abstract: Si9933ADY Si9934DY
Contextual Info: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1

Si9934DY

Contextual Info: Si9934DY Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET

SI9934BDY

Contextual Info: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2

SI9934BDY

Contextual Info: Si9934BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2

Si9934BDY

Abstract: Si9934BDY-T1-E3 Si9934DY Si9934DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si9934BDY vs. Si9934DY Description: Dual P-Channel, 2.5 V G-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si9934BDY-T1-E3 Replaces Si9934DY-T1-E3 Si9934BDY-T1 Replaces Si9934DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si9934BDY

Contextual Info: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2

Si9934DY

Abstract: P-channel power mosfet SO-8 Si6943DQ Si9933DY S-47590
Contextual Info: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ

Si9934BDY

Abstract: Si9934BDY-T1-E3
Contextual Info: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 6.4 0.056 at VGS = - 2.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9934DY

Abstract: MS4080
Contextual Info: Si9934DY Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 12 rDS(on) (W) ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET

MS-4075

Abstract: Si6943DQ Si9933DY Si9934DY
Contextual Info: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ

Contextual Info: Tem ic Si9934DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V D S (V ) r DS(on) (£2) I d (A ) 0.05 @ V Gs = -4 .5 V ±5 0.074 @ V GS = -2 .5 V ± 4 .1 12 i Si o S2 p SO -8 si [~r ~8~l Di Gi [ t ; X S2 I X ~6~| D2 X ~~5~| D2 g2 °i

Si6943DQ

Abstract: Si9933DY Si9934DY MS-4075
Contextual Info: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1 S2 SO-8

Si9934DY

Contextual Info: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2

Si9934BDY

Contextual Info: SPICE Device Model Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9934BDY

Contextual Info: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2

8439

Abstract: AN609 Si9934BDY
Contextual Info: Si9934BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

C5074

Abstract: PF446 Si9934DY
Contextual Info: Si9934DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate