A84 MARKING CODE Search Results

Contextual Info: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84  -40 qC TO RELATIVE HUMIDITY  40 % TO 60 qC (2) 95 % RH MAX. (3)

Contextual Info: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84  -10 qC TO RELATIVE HUMIDITY  40 % TO 60 qC (2) 95 % RH MAX. (3)

EIA-364-65

Abstract: EIA364-65 EIA-364-23 EIA-364-13 EIA-364-09 EIA-364-20 EIA-364-27 EIA-364-31
Contextual Info: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 1 50 V AC VOLTAGE RATING 85 qC 0.75A CURRENT No.a1㨪a8,a77㨪a84 STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE  -40 qC TO  60 qC (2) 95 % RH MAX. (3) RELATIVE HUMIDITY

74LS245N

Abstract: Philips FA 145 15B15 74F521 N74F521D N74F521N mxa 504 n74f521 marking MXA 8 900mil
Contextual Info: Philips Semiconductors-Signetics Document No. 853 -0 3 72 E C N No. 99601 Date of issue May 1 5 .1 9 9 0 Status Product Specification FAST 74F521 8-Bit Identity Comparator Comparator FA ST Products FEATURES TYPE • Compares two 8-bit words in 6.5ns typical

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

a80 marking code

Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

HYR163249G-653

Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Contextual Info: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

a80 marking code

Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Contextual Info: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V

b41 Marking

Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

A76 MARKING CODE

Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Contextual Info: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

A23 851 diode

Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other

MARKING CODE 11gb

Contextual Info: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

ic marking B48

Abstract: a80 marking code MARKING B83 marking A31 marking code B38 G100 S100
Contextual Info: Rambus RIMM Module with 256/288Mb RDRAMs ® RAMBUS Overview Key Timing Parameters The Rambus® RIMM™ module is a general purpose high-performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other

HYR163240G-653

Abstract: HYR163240G-745 HYR163240G-840 HYR163240G-845 HYR166440G-653 HYR166440G-745 HYR183240G-653 HYR183240G-745 HYR183240G-840 HYR183240G-845
Contextual Info: HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

MARKING B83

Contextual Info: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb RDRAMs(B-die) Consumer RIMM Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMMTM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V

marking A45

Abstract: a80 marking code marking a86 B14 marking code B58 468 diagram marking A32 marking code B38 MR18R326GAG0 MR18R326GAG0-CM8 MR18R326GAG0-CT9
Contextual Info: MR18R326GAG0 Change History Version 1.0 Mar. 2004 * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 1.0 Mar. 2004 MR18R326GAG0 (32Mx18)*16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

HYR1612820G-653

Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
Contextual Info: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

74F109

Abstract: 74LS245N I74F109D I74F109N N74F109D N74F109N
Contextual Info: Product specification Philips S em ico n d u cto rs-S ig n e tics FAST Products Positive J -K positive edge-triggered flip-flops FEATURE TYPE • Industrial temperature range available -40°C to +85°C 74F109 DESCRIPTION The 74F109 is a dual positive edgetriggered JK-type flip-flop featuring in­

74LS245N

Abstract: da yao electronic 74F240 74F240A 74F241 74F241A N74F240AN N74F240N n74f240 BKA marking code
Contextual Info: Product specification Philips Semiconductors-Signetics FAST Products 74F240/74F240A 74F241 /74F241A Buffers 74F240/240A Octal inverter buffer 3-state 74F241/241A Octal buffer (3-state) FEATURES TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT (TOTAL)

TP12SH9AVBE

Abstract: 10PDT 6PDT switch A77 marking marking code V3
Contextual Info: Pushbuttons Product Selection Guide Pushbutton A Pushbutton Series ELUM EP TP Mom./ Latching Tiny Tiny Poles/Throws SPDT SPST, SPDT, DPST SPST, SPDT, DPST SPDT, DPDT SPDT, DPDT, 3PDT, 4PDT Max. Current 3.5 VA 1 Amp 1 Amp 1 Amp 1 Amp Switch Type Process Sealed

MR18R162GMN0-CK8

Contextual Info: Preliminary MR18R1624 6/8/C/G MN0 TM 4/6/8/12/16d RIMM Module with 288Mb RDRAMs Revision History Version 0.9 (January 2000) - Preliminary - First copy. - Be derived from the 1.02ver 128/144Mbit RDRAM Datasheet Page 0 Rev.0.9 Jan. 2000 Preliminary MR18R1624(6/8/C/G)MN0

MR16R1622

Abstract: HOT 624
Contextual Info: MR16R1622 4/8/G DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V

code A106

Abstract: MD16R1628EG0-CN1 MD16R1628EG0-CT9 MD16R162GEG0-CN1 MD16R162GEG0-CT9 MD16R1624EG0-CM8 MD16R1624EG0-CN1 MD16R1624EG0-CT9 MD16R1628EG0-CM8 serial presence detect samsung 2010
Contextual Info: MD16R1624 8/G EG0 Change History Version 1.0 (January 2004) * First copy. * Based on version 1.0 (July 2002) 256Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 Jan. 2004 MD16R1624(8/G)EG0 (16Mx16)*4(8/16)pcs 32 Bit RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V