A5T3 Search Results

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

a5t3496

Contextual Info: TYPES A5T3496, A5T3497 P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L-S 731 1 9 5 3 , M A R C H 1973 S IL E C T t TRA N SISTO R SÎ FOR H IG H -VO LTAG E, MEDIUM-SPEED, G EN E R A L PURPOSE APPLICATIONS • High V B R C EO • ••80 V (A5T3496), 120 V (A5T3497)

a5t3565

Contextual Info: TYPE A5T3565 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 731 1 9 5 1 , M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R ! FOR H I-F I A U D IO A N D G EN ER A L PURPOSE LOW -FR EQ UENC Y A M P L IF IE R APPLICATIO N S • High h F E • ■ • 150 to 600

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

A5T3638A

Abstract: a5t3638
Contextual Info: TY P ES A5T3638, A5T3638A P-N-P SILIC ON TRANSISTO R S B U L L E T I N N O . O L -S 7 3 1 1 9 6 2 , M A R C H 1 9 7 3 S IL E C T t T R A N SISTO R S* FOR H IG H -C U R R E N T, M EDIUM -SPEED SW ITCH IN G A PPLICATIO N S • High Collecter C u rren t. . . 500 mA

a5t3504

Contextual Info: TYPES A5T3504, A5T3505 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 8 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Î FO R H IG H -S PEED SW ITCH ING O R LOW -NOISE G E N E R A L P U R PO SE A M P L I F I E R A P P L IC A T IO N S

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

tl2222a

Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
Contextual Info: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904

BC560AP

Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

Contextual Info: A5T3496 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: A5T3798 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3406

Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391

2sc711

Abstract: 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391

Contextual Info: A5T3391 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

A5T3571

Contextual Info: TYPES A5T3571, A5T3572 N-P-N SILICON TRANSISTORS B U L L E T IN NO . D L S 7311950, M A R C H 1973 SILECTt TRANSISTORS! FOR LOW-NOISE V H F/U H F AMPLIFIER, OSCILLATOR, AND MIXER APPLICATIONS • Minimum Calculated fmax§ •• ■2.2 GHz A5T3571 • Low Noise Figure . . . 4 dB Maximum (A5T3571)

2N 3391

Abstract: LA 4207 T 3391A a5t3391 3392 2n3391a
Contextual Info: TYPES A5T3391. A5T3391A, A5T3392, A7T3391, A7T3391A, A7T3392. A8T3391. A8T3391A, A8T3392 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 3 1 , M A R C H 1973 S ILE C T t TRA N SISTO R S* • For Small-Signal Am plifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

A5T3904

Abstract: a5t3905 A5T3906 5T3906 2n3906 texas instruments
Contextual Info: TYPES 2N3905, 2N3906. A5T3905, A5T3906 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 1 5 7 7 , N O V E M B E R 1 9 7 1 - R E V IS E D M ARCH 1973 S I L E C T t T R A N S IS T O R S * FO R G E N E R A L PU R P O SE S A T U R A T E D -SW IT C H IN G AND A M P L IF IE R A P P LIC A T IO N S

5T3824

Abstract: A5T3821 5T3821 a5t3822 a5t3 2N5358 2N5364 A5T3824 5T3822 5T3823
Contextual Info: T Y P E S A5T3821 T H R U A5T3824 N - C H A N N E L S IL IC O N J U N C T I O N F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 1 1 1 5 0 7 , J U L Y 1971 S ILE C T * F IE L D -E F F E C T T R A N SISTO R S* • Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle

A5T3644

Abstract: 2n3645 2N3644 5T3644
Contextual Info: TYPES A5T3644, A5T3645, ^11? P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 3 1 8 , M A R C H 1 9 7 0 -R E V IS E D M A R C H 1973 SILECTt TRANSISTORS! DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS

itt 3904

Abstract: A5T3904 a5t3903 itt 3903 A5T3906 2n3904, itt
Contextual Info: TYP ES 2N3903, 2N3904. A5T3903, A5T3904 N -P -N S IL IC O N T R A N S IS T O R S B U L L E T IN N O . D L 'S 7 3 1 1576, N O V E M B E R 19 71 - R E V ISE D M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R S ! F O R G E N E R A L P U R P O S E S A T U R A T E D -S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S

Contextual Info: A5T3565 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: A5T3906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)140þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.