A2 MARKING JD Search Results
A2 MARKING JD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54F191/QEA |
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54F191/QEA - Dual marked (5962-9058201EA) |
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A2 MARKING JD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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sub-d 25 polig
Abstract: sub-d 25 pin dimension
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OCR Scan |
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sub-d 25 polig
Abstract: sub-d 25 pin dimension
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OCR Scan |
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Contextual Info: White Electronic Designs W3EG7235S-JD3 PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED ECC, w/PLL FEATURES Double-data-rate architecture Speeds of 100MHz and 133MHz Bi-directional data strobes DQS Differential clock inputs (CK# & CK) |
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W3EG7235S-JD3 256MB 32Mx72 100MHz 133MHz WED3DG7235S 128Mb 16Mx8 | |
DDR200
Abstract: DDR266 DDR333 DDR400 WED3EG7232S-JD3 256mb ddr333 200 pin T26Z
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WED3EG7232S-JD3 256MB 32Mx72 WED3EG7232S 256Mb 32Mx8 DDR200, DDR266, DDR333 DDR200 DDR266 DDR400 WED3EG7232S-JD3 256mb ddr333 200 pin T26Z | |
DDR200
Abstract: DDR266 DDR333 DDR400 42704
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W3EG7264S-JD3-D3 512MB 64Mx72 W3EG7264S 512Mb 64Mx8 DDR200, DDR266, DDR333 DDR200 DDR266 DDR400 42704 | |
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Contextual Info: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR |
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W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz | |
reset samsung 1665
Abstract: DDR200 DDR266 DDR333 DDR400 13003 TO 92 PACKAGE
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W3EG7264S-JD3-D3 512MB 64Mx72 W3EG7264S 512Mb 64Mx8 DDR200, DDR266, DDR333 reset samsung 1665 DDR200 DDR266 DDR400 13003 TO 92 PACKAGE | |
DDR200
Abstract: DDR266 DDR333 DDR400 W3EG64128S-D3
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W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz DDR200 DDR266 DDR333 DDR400 W3EG64128S-D3 | |
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Contextual Info: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR |
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W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 128Mx64 100MHz, 133MHz, 166MHz | |
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Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 |
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W3EG7264S-JD3-D3 512MB 64Mx72 W3EG7264S 512Mb 64Mx8 DDR200, DDR266, DDR333 | |
DDR200
Abstract: DDR266 DDR333 DDR400 W3EG64128S-D3
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W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz DDR200 DDR266 DDR333 DDR400 W3EG64128S-D3 | |
diode marking code 7
Abstract: MARKING EG BAS16T-7 BAS16T BAV70T BAV99T BAW56T J-STD-020A diode Marking code A2
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BAS16T, BAW56T, BAV70T, BAV99T OT-523 OT-523, J-STD-020A MIL-STD-202, T-523 3000/Tape diode marking code 7 MARKING EG BAS16T-7 BAS16T BAV70T BAV99T BAW56T J-STD-020A diode Marking code A2 | |
DIODE marking A2
Abstract: marking A2 marking code je BAS16T BAS16T-7 BAV70T BAV99T BAW56T J-STD-020A
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BAS16T BAW56T BAV70T BAV99T BAS16T, BAW56T, BAV70T, OT-523 OT-523, DIODE marking A2 marking A2 marking code je BAS16T-7 BAV99T J-STD-020A | |
DDR200
Abstract: DDR266 DDR333 W3EG7263S-D3
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W3EG7263S-D3 512MB- 64Mx72 W3EG7263S 256Mb 64Mx4 100MHz, 133MHz 166MHz DDR200 DDR266 DDR333 W3EG7263S-D3 | |
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Contextual Info: White Electronic Designs W3EG72129S-JD3 PRELIMINARY* 1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72129S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eighteen 64Mx8 DDR |
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W3EG72129S-JD3 128Mx72 W3EG72129S 512Mb 64Mx8 | |
DDR200
Abstract: DDR266 DDR333 DDR400 W3EG72129S-JD3
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W3EG72129S-JD3 2x64Mx72 W3EG72129S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz DDR200 DDR266 DDR333 DDR400 W3EG72129S-JD3 | |
DDR200
Abstract: DDR266 DDR333 DDR400 W3EG72129S-JD3
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W3EG72129S-JD3 2x64Mx72 W3EG72129S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz DDR200 DDR266 DDR333 DDR400 W3EG72129S-JD3 | |
RUW101MW
Abstract: RUZC2M RUMC22JD
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DIA3ED2090304EN-RUM-US RUW101MW RUZC2M RUMC22JD | |
en 12895
Abstract: DDR200 DDR266
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W3EG6464S-JD3-D3 512MB 64Mx64 W3EG6464S 512Mb 64Mx8 DDR200 DDR266 en 12895 DDR266 | |
DDR200
Abstract: DDR266
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W3EG6464S-JD3-D3 512MB 64Mx64 W3EG6464S 512Mb 64Mx8 DDR200 DDR266 DDR266 | |
BAW56T
Abstract: BAS16T BAS16T-7-F BAV70T BAV99T BAW56T-7-F
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BAS16T, BAW56T, BAV70T, BAV99T OT-523 J-STD-020C MIL-STD-202, BAS16T BAW56T BAS16T-7-F BAV70T BAV99T BAW56T-7-F | |
DIODE marking A2
Abstract: diode Marking code A2 BAS16T BAS16T-7-F BAV70T BAV99T BAW56T BAW56T-7-F J-STD-020D
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BAS16T, BAW56T, BAV70T, BAV99T OT-523 J-STD-020D MIL-STD-202, DIODE marking A2 diode Marking code A2 BAS16T BAS16T-7-F BAV70T BAV99T BAW56T BAW56T-7-F J-STD-020D | |
DDR200
Abstract: DDR266 W3EG7262S-D3
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W3EG7262S-D3 512MB 2X32Mx72 W3EG7262S 256Mb 32Mx8 DDR200 DDR266 system7262S-D3 DDR266 W3EG7262S-D3 | |
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Contextual Info: White Electronic Designs W3EG72255S-D3 -JD3 -AJD3 PRELIMINARY* 2GB-256Mx72 DDR SDRAM REGISTERED ECC FEATURES DESCRIPTION n Double-data-rate architecture n DDR200, DDR266 and DDR333; The W3EG72255S is a 256Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM |
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W3EG72255S-D3 2GB-256Mx72 DDR200, DDR266 DDR333; W3EG72255S 256Mx72 512Mb 256Mx4 128Mx72 | |