A14F DIODE Search Results

A14A

Abstract: A14F
Contextual Info: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction

Contextual Info: A14F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)100 V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25õ

Contextual Info: HARRIS S E m C O N D SECTOR ÎS Î U U H a r r bflE J> i s • 43D2271 00SD3Dfl T32 « H A S 14A, A14C, A14E 4F 14P ^ SEMICONDUCTOR 1 A, 50V ■ 1000V DlOd6S December 1993 Package Features • High-Temperature Metallurgically Bonded, No Com­ pression Contacts as Found in Diode-Constructed

1N4007 ZENER DIODE

Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Contextual Info: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE

diode A14A

Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

diode a15a

Abstract: diode A14A 6A4 rectifier diode p600m DIODE A14F diode 6AO5 RGP15G diode 6A8 RECTIFIER DIODE diode P600A DIODE 1N5402 3a
Contextual Info: Elite Semiconductor Products | Diodes Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs

diode A14A

Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

amper 1N5061

Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
Contextual Info: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

B647C

Abstract: diode 624 u1g B4K1
Contextual Info: 1 12345678996 ABCBDEFFC66 1 1 1 1F4D42564DC26 ABCF6 A26 1F6 12345678996 FD425D6 EB5FD6 2345674891 8A21 BCA81 DEFE1FFF1 84F4281 2A81 BCA81 FE1D 1!16F1"6E1D # $1 %EE1%F1 FE1& 16'FE1 6E1 ACA21 8C4*+4281

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

ana 658 solar charge

Abstract: RD2004 for 4120 40A 14VDC relay pico fuse color code varistor 20sp Lucent SLC 96 cabinet MDM cooper bussmann semiconductor fuse catalogue MDQ 100a 600v bridge rectifier GBA 616
Contextual Info: Bussmann electrical full line catalog Leadership in Circuit Protection Introducing Bussmann by Eaton The protection you rely on. For more, visit Bussmann.com Leadership in Circuit Protection. The only company that can provide a complete circuit protection solution for all applications.

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

mr852

Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MUR420 diode

Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal

diode A14A surface mount

Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
Contextual Info: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction