A00002 Search Results

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

AEC-Q100-003

Abstract: FM25W256
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: FM25L16B-GTR fm25l16b-g
Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

invertor

Abstract: 78p064 UPD780022 nec 78012F TMC01 uPD78014H PD780208 PD78044F uPD78044H 45008D
Contextual Info: K0 Family 8-Bit Single-Chip Microcontrollers Programmer's Reference Manual µPD78014/14Y Subseries µPD78014H Subseries µPD78018F/18FY Subseries µPD780208 Subseries µPD780024/24Y Subseries µPD780034/34Y Subseries µPD78044F Subseries µPD78044H Subseries

FM25W256-Gtr

Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: AEC-Q100-002 FM25L16B FM25L16B-DG FM25L16B-G
Contextual Info: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm24c04b

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM24CL04BG

Contextual Info: FM24CL04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1014 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

AEC-Q100-002

Abstract: FM25160
Contextual Info: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

BIT3105

Abstract: 4001 internal block diagram 0310H 80960 dsar3 a6403 2081 0000 02
Contextual Info: 20 Application Accelerator Unit This chapter describes the integrated Application Accelerator Unit AAU . The operation modes, setup, external interface, and implementation of the AAU are detailed in this chapter. 20.1 Overview The AAU provides low-latency, high-throughput data transfer capability between the AAU and

HTR resistors

Abstract: 80960 80960SA reference i960 RP Processor 80960JF STT 433 1250H clock generator in dual core processor i960 Cx Instruction Set Quick Reference i960 Cx Processor Instruction Set Quick Reference
Contextual Info: i960 RP Microprocessor User’s Manual i960® RP Microprocessor User’s Manual February 1996 Order Number: 272736-001 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for

80960

Abstract: BO 620 bbc timer stt 11 c17f i960 Cx Processor Instruction Set Quick Reference i960RP 80960JF 80960RD 80960RP MA11
Contextual Info: i960 Rx I/O Microprocessor Developer’s Manual Release Date: April, 1997 Order Number: 272736-002 The i960® Rx I/O Processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Such errata are

Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

FM24CL16BG

Abstract: fm24cl16b-g AEC-Q100-002 FM24CL16 FM24CL16B
Contextual Info: Preliminary FM24CL16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L64B

Abstract: FM25CL64BG FM25CL64B-G r5l64B FM25CL64B rev 1.0 FM25CL64B-GTR AEC-Q100-002 FM25CL64B FM25CL64B Feb 2011 fm25l64
Contextual Info: Preliminary FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24CL64B

Abstract: FM24CL64b-G R4L64B FM24CL64BG FM24CL64B-GTR FM24CL64B-DG AEC-Q100-002 FM24CL64
Contextual Info: Preliminary FM24CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

TMP38

Abstract: tmp34 tmp39 tmp53 tmp63 AN073 tmp64 A00014 TMP41 tmp45
Contextual Info: Philips Semiconductors Application note Synplicity/Model Tech Design Flow for targeting Philips CPLDs INTRODUCTION Philips Semiconductor has developed a family of advanced 3-volt and 5-volt complex programmable logic devices CPLDs . The XPLA series, designated as the PZ5000 - (5-volt) and PZ3000 (3-volt) series devices, is footprint

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

FM25L04B

Abstract: FM-25
Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24c64b-gtr

Abstract: FM24C64B
Contextual Info: FM24C64B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24c04-c-g

Contextual Info: Preliminary FM24C04C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process