Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RIC1039 Search Results

    RIC1039 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AEC-Q100-003

    Abstract: FM25W256
    Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kb256-kilobitms-012+4fm25w256-ga00002g1ric1039aec-q100-003 PDF

    FM25W256-Gtr

    Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kb256-kilobitfm25w256-gtr PDF

    Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kb256-kserves PDF

    Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kb256-kilobitfm25w256-g+2a00002g1ric1039 PDF

    FM25W256

    Abstract: FM25W256GTR FM25W256-GTR microcontroller bus system "test bus"
    Contextual Info: Pre-Production FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kb256-kilobitms-012+6fm25w256-ga00002g1ric1039fm25w256gtrfm25w256-gtrmicrocontroller bus system "test bus PDF

    Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kbfm25w256-ga00002g1+1ric1039 PDF

    FM25W256-G

    Abstract: FM25W256 AEC-Q100-002 RIC1039
    Contextual Info: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kbms-012fm25w256-g+3a00002g1ric1039aec-q100-002 PDF

    FM25W256

    Abstract: AEC-Q100-002 FM25W256-G
    Contextual Info: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    fm25w256256kbms-012fm25w256-g+3a00002g1ric1039aec-q100-002 PDF